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SI5402BDC, SI5402BDC-T1-E3, SI5402DC

SI5402BDC, SI5402BDC-T1-E3, SI5402DC Selling Leads, Datasheet

MFG:VISHAY  Package Cooled:SOT-283  D/C:06+PB

SI5402BDC, SI5402BDC-T1-E3, SI5402DC Picture

SI5402BDC, SI5402BDC-T1-E3, SI5402DC Datasheet download

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Part Number: SI5402BDC

 

MFG: VISHAY

Package Cooled: SOT-283

D/C: 06+PB

 

 

 
 
 
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SI5402BDC Suppliers

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  • SI5321GBC

  • Pack: SIL  Adddate: 2024-04-29
  • Inquire Now
  • NEW ELITE GROUP   China
    Contact: Mr.arteinchow  
    Tel: 086-0755-83279898-1166
    Fax: 086-0755-83279502
    (1)

About Si5402BDC

PDF/DataSheet Download

Datasheet: Si5402BDC

File Size: 93320 KB

Manufacturer: VISAY [Vishay Siliconix]

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SI5402BDC-T1-E3 Suppliers

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  • SI5321GBC

  • Pack: SIL  Adddate: 2024-04-29
  • Inquire Now
  • NEW ELITE GROUP   China
    Contact: Mr.arteinchow  
    Tel: 086-0755-83279898-1166
    Fax: 086-0755-83279502
    (1)

About SI5010

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Datasheet: SI5010

File Size: 289324 KB

Manufacturer: ETC [ETC]

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SI5402DC Suppliers

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  • SI5402DC-T1

  • Vendor: Vishay D/C: 04+& Qty: 1222  Adddate: 2024-04-29
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About SI5402DC

PDF/DataSheet Download

Datasheet: SI5402DC

File Size: 93320 KB

Manufacturer: VISAY [Vishay Siliconix]

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SI5402BDC General Description

N-Channel 30-V (D-S) MOSFET

SI5402BDC Maximum Ratings

Parameter Symbol Si5402BDC Si5402DC Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current TA = 25 ID 6.7 6.7 A
TA = 70 4.8 4.8
Pulsed Drain Current IDM 20 20
Continuous Source Current
(MOSFET Diode Conduction)
IS 2.1 2.1
Power Dissipation
TA = 25 PD 2.5 2.5 W
TA = 70 1.3 1.3
Maximum Junction-to-Ambient RthJA 50 50 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 55 to 150

SI5402DC Maximum Ratings

Parameter Symbol Si5402BDC Si5402DC Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current TA = 25 ID 6.7 6.7 A
TA = 70 4.8 4.8
Pulsed Drain Current IDM 20 20
Continuous Source Current
(MOSFET Diode Conduction)
IS 2.1 2.1
Power Dissipation
TA = 25 PD 2.5 2.5 W
TA = 70 1.3 1.3
Maximum Junction-to-Ambient RthJA 50 50 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 55 to 150

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