SI6923DQ, SI6923DQT1, SI6923DQ-T1 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
SI6923DQ, SI6923DQT1, SI6923DQ-T1 Datasheet download
Part Number: SI6923DQ
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
SI6923DQ, SI6923DQT1, SI6923DQ-T1
- Table of contents:
Info of SI6923DQ
Info of SI6923DQT1
Info of SI6923DQ-T1
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About SI6923DQ
PDF/DataSheet Download
Datasheet: SI6923DQ
File Size: 94962 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SI6404DQ
PDF/DataSheet Download
Datasheet: SI6404DQ
File Size: 47430 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SI6404DQ
PDF/DataSheet Download
Datasheet: SI6404DQ
File Size: 47430 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
SI6923DQ General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.
SI6923DQ Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | -20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID | Load Current Continuous (Note 1) - Pulsed |
-3.5 | A |
| -30 | |||
| PD | MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1) |
1.2 | W |
| 1.0 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 |
SI6923DQ Features
• 3.5 A, 20 V. RDS(ON) = 0.045 @ VGS = 4.5 V
RDS(ON) = 0.075 @ VGS = 2.5 V
• VF < 0.55 V @ 1 A
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package
RDS(ON) = 0.075 @ VGS = 2.5 V
• VF < 0.55 V @ 1 A
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package
SI6923DQ Typical Application
• DC/DC conversion
SI6923DQ Connection Diagram
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