SIHF830A, SIHF830AL, SIHF830AS Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-220 D/C:2010+
SIHF830A, SIHF830AL, SIHF830AS Datasheet download
Part Number: SIHF830A
MFG: Vishay
Package Cooled: TO-220
D/C: 2010+
SIHF830A, SIHF830AL, SIHF830AS
- Table of contents:
Info of SIHF830A
Info of SIHF830AL
Info of SIHF830AS
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About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SIHF830AL Maximum Ratings
|
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
| Drain-Source Voltage |
VDS |
500 |
V |
| Gate-Source Voltage |
VGS |
± 30 |
V |
| Continuous Drain Current VGS at 10 V TC = 25 TC = 100 |
ID |
5.0 |
A |
|
3.2 | |||
| Pulsed Drain Current |
IDM |
20 |
A |
| Linear Derating Factor |
0.59 |
W/ | |
| Single Pulse Avalanche Energy |
EAS |
230 |
mJ |
| Avalanche Current |
IAR |
5.0 |
A |
| Repetiitive Avalanche Energy |
EAR |
7.4 |
mJ |
| Maximum Power Dissipation TA = 25 TC = 25 |
PD |
3.1 |
W |
|
74 | |||
| Peak Diode Recovery dV/dt |
dv/dt |
5.3 |
V/ns |
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
- 55 to + 150 |
|
| Soldering Recommendations (Peak Temperature) for 10 s |
300 |
SIHF830AL Features
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified
• Lead (Pb)-free Available
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified
• Lead (Pb)-free Available
SIHF830AL Typical Application
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching
• Uninterruptible Power Supply
• High speed power switching
SIHF830AS Maximum Ratings
|
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
| Drain-Source Voltage |
VDS |
500 |
V |
| Gate-Source Voltage |
VGS |
± 30 |
V |
| Continuous Drain Current VGS at 10 V TC = 25 TC = 100 |
ID |
5.0 |
A |
|
3.2 | |||
| Pulsed Drain Current |
IDM |
20 |
A |
| Linear Derating Factor |
0.59 |
W/ | |
| Single Pulse Avalanche Energy |
EAS |
230 |
mJ |
| Avalanche Current |
IAR |
5.0 |
A |
| Repetiitive Avalanche Energy |
EAR |
7.4 |
mJ |
| Maximum Power Dissipation TA = 25 TC = 25 |
PD |
3.1 |
W |
|
74 | |||
| Peak Diode Recovery dV/dt |
dv/dt |
5.3 |
V/ns |
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
- 55 to + 150 |
|
| Soldering Recommendations (Peak Temperature) for 10 s |
300 |
SIHF830AS Features
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified
• Lead (Pb)-free Available
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified
• Lead (Pb)-free Available
SIHF830AS Typical Application
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching
• Uninterruptible Power Supply
• High speed power switching
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