SIHFZ48RL, SIHFZ48RS, SIHFZ48S Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-262 D/C:2010+
SIHFZ48RL, SIHFZ48RS, SIHFZ48S Datasheet download
Part Number: SIHFZ48RL
MFG: Vishay
Package Cooled: TO-262
D/C: 2010+
SIHFZ48RL, SIHFZ48RS, SIHFZ48S
- Table of contents:
Info of SIHFZ48RL
Info of SIHFZ48RS
Info of SIHFZ48S
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About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SIHFZ48S General Description
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications.
SIHFZ48S Maximum Ratings
|
PARAMETER |
SYMBOL |
LIMIT |
UNIT | ||
|
Drain-Source Voltage |
VDS |
60 |
V | ||
|
Gate-Source Voltage |
VGS |
± 20 | |||
|
Continuous Drain Currentf |
VGS at 10 V |
TC = 25 |
ID |
50 |
A |
|
TC = 100 |
50 | ||||
|
Pulsed Drain Currenta, e |
IDM |
290 | |||
|
Linear Derating Factor |
1.3 |
W/ | |||
|
Single Pulse Avalanche Energyb, e |
EAS |
100 |
mJ | ||
|
Maximum Power Dissipation |
TC = 25 |
PD |
190 |
W | |
|
TA = 25 |
3.7 | ||||
|
Peak Diode Recovery dV/dtc, e |
dV/dt |
4.5 |
V/ns | ||
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
- 55 to + 175 |
|||
|
Soldering Recommendations (Peak Temperature)d |
for 10 s |
300 | |||
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25, L = 22 H, RG = 25 , IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/s, VDD VDS, TJ 175.
d. 1.6 mm from case.
e. Uses IRFZ48/SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply
SIHFZ48S Features
• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
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