SKB10N60, SKB10N60 E3045A, SKB10N60A Selling Leads, Datasheet
MFG:INFINEON Package Cooled:. D/C:03+
SKB10N60, SKB10N60 E3045A, SKB10N60A Datasheet download

Part Number: SKB10N60
MFG: INFINEON
Package Cooled: .
D/C: 03+
MFG:INFINEON Package Cooled:. D/C:03+
SKB10N60, SKB10N60 E3045A, SKB10N60A Datasheet download

MFG: INFINEON
Package Cooled: .
D/C: 03+
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Asia World Trade Technology Source
Contact: Ms.Boning Tan
Tel: 086-0755-25573524
Adddate: 2010-07-31
(637)
PDF/DataSheet Download
Datasheet: SKB10N60
File Size: 304020 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SKB02N120
File Size: 416587 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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PDF/DataSheet Download
Datasheet: SKB10N60A
File Size: 453757 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25°C TC = 100°C |
IC |
21 10.9 |
A |
| Pulsed collector current, tp limited by Tjmax |
ICpuls |
42 |
|
| Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C |
- |
42 |
|
| Diode forward current TC = 25°C TC = 100°C |
IF |
21 10 |
|
| Diode pulsed current, tp limited by Tjmax |
IFpuls |
42 |
|
| Gate-emitter voltage |
VGE |
±20 |
V |
| Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C |
tSC |
10 |
μs |
| Power dissipation TC = 25°C |
Ptot |
104 |
W |
| Operating junction and storage temperature |
Tj,Tstg |
-55...+150 |
°C |
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
| Parameter |
Symbol |
Value
|
Unit |
|
SKP10N60A SKB10N60A SKW10N60A | |||
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25°C TC = 100°C |
IC |
20 10.6 |
A |
| Pulsed collector current, tp limited by Tjmax |
ICpuls |
40 |
A |
| Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C |
- |
40 |
A |
| Diode forward current TC = 25°C TC = 100°C |
IF |
21 10 |
A |
| Diode pulsed current, tp limited by Tjmax |
IFpuls |
42 |
A |
| Gate-emitter voltage |
VGE |
±20 |
V |
| Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C |
tSC |
10 |
µs |
| Power dissipation TC = 25°C |
Ptot |
92 |
W |
| Operating junction and storage temperature |
Tj , Tstg |
-55to+150 |
°C |
