MFG:Rohm Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+
SP8M4TB, SP8M6, SP8M8 Datasheet download
Category: Discrete Semiconductor Products
MFG: Rohm Semiconductor
Package Cooled: SOP-8
D/C: 09+
Description: MOSFET N+P 30V 9A/7A 8-SOIC
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PDF/DataSheet Download
Datasheet: SP800L
File Size: 201148 KB
Manufacturer: SIPEX [Sipex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SP8M6
File Size: 107093 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SP8M8
File Size: 78031 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
| Technical/Catalog Information | SP8M4TB |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A, 7A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1190pF @ 10V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SP8M4TB SP8M4TB SP8M4TBTR ND SP8M4TBTRND SP8M4TBTR |
| Parameter | Symbol | Limits | Unit | ||
| Nchannel | Pchannel | ||||
| Drain-source voltage | VDSS | 30 | -30 | V | |
| Gate-source voltage | VGSS | 20 | ±20 | V | |
| Drain current | Continuous | ID | ±5 | ±3.5 | A |
| Pulsed | IDP | ±20 | ±14 | A *1 | |
| Source current (Body diode) |
Continuous | IS | 1.6 | -1.6 | A |
| Pulsed | ISP | 20 | -14 | A *1 | |
| Total power dissipation | PD | 2.0 | W *2 | ||
| Channel temperature | Tch | 150 | °C | ||
| Parameter | Symbol | Limits | Unit | ||
| Nchannel | Pchannel | ||||
| Drain-source voltage | VDSS | 30 | -30 | V | |
| Gate-source voltage | VGSS | 20 | ±20 | V | |
| Drain current | Continuous | ID | ±6.0 | ±4.5 | A |
| Pulsed | IDP | ±24 | ±18 | A *1 | |
| Source current (Body diode) |
Continuous | IS | 1.6 | -1.6 | A |
| Pulsed | ISP | 20 | -18 | A *1 | |
| Total power dissipation | PD | 2.0 | W *2 | ||
| Channel temperature | Tch | 150 | °C | ||
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