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SSF39VF020-90-4C-NH, SSF45N20B, SSF45N20B-FP001

SSF39VF020-90-4C-NH, SSF45N20B, SSF45N20B-FP001 Selling Leads, Datasheet

MFG:SST  Package Cooled:PLCC32  D/C:9933

SSF39VF020-90-4C-NH, SSF45N20B, SSF45N20B-FP001 Picture

SSF39VF020-90-4C-NH, SSF45N20B, SSF45N20B-FP001 Datasheet download

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Part Number: SSF39VF020-90-4C-NH

 

MFG: SST

Package Cooled: PLCC32

D/C: 9933

 

 

 
 
 
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About SSF10N60A

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Datasheet: SSF10N60A

File Size: 262714 KB

Manufacturer: Fairchild Semiconductor

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About SSF45N20B

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Datasheet: SSF45N20B

File Size: 691105 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About SSF10N60A

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Datasheet: SSF10N60A

File Size: 262714 KB

Manufacturer: Fairchild Semiconductor

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SSF45N20B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

SSF45N20B Maximum Ratings

Symbol Parameter SSF45N20B Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)
26.4 A
16.7 A
IDM Drain Current - Pulsed                                           (Note 1) 106 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy                             (Note 2) 650 mJ
IAR Avalanche Current (Note 1) 26.4 A
EAR Repetitive Avalanche Energy                                   (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt                                     (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
                     - Derate above 25°C
100 W
0.8 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C

SSF45N20B Features

• 26.4A, 200V, R DS(on) = 0.065Ω @VGS = 10 V
• Low gate charge ( typical 133 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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