SSR2N60, SSR2N60A, SSR2N60B Selling Leads, Datasheet
Package Cooled:252 D/C:TO252
SSR2N60, SSR2N60A, SSR2N60B Datasheet download
Part Number: SSR2N60
MFG: --
Package Cooled: 252
D/C: TO252
SSR2N60, SSR2N60A, SSR2N60B
- Table of contents:
Info of SSR2N60
Info of SSR2N60A
Info of SSR2N60B
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About SSR2N60
PDF/DataSheet Download
Datasheet: SSR2N60
File Size: 660327 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSR1
PDF/DataSheet Download
Datasheet: SSR1
File Size: 208897 KB
Manufacturer:
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About SSR2N60B
PDF/DataSheet Download
Datasheet: SSR2N60B
File Size: 660327 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSR2N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSR2N60B Maximum Ratings
| Symbol | Parameter | SSR2N60B / SSU2N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.8 | A |
| 1.1 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 120 | mJ |
| IAR | Avalanche Current (Note 1) | 1.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
44 | W | |
| 0.35 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSR2N60B Features
• 1.8A, 600V, R DS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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