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The STC62WV256 is a high performance , very low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by active LOW chip enable (CE), active LOW output enable (OE) and three-state output drivers.
The STC62WV256 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The STC62WV256 is available in the DICE form, JEDEC standard 28pin 330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and 8mmx 13.4mm TSOP (normal type)
STC62WV256 Maximum Ratings
SYMBOL
PARAMETER
RATING
UNITS
VTERM
Terminal Voltage with Respect to GND
-0.5 to Vcc+0.5
V
TBIAS
Temperature Under Bias
-40 to +125
TSTG
Storage Temperature
-60 to +150
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
STC62WV256 Features
• Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.01uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options