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Using the latest high voltage technology based n patented strip layout, SGS-Thomson has esigned an advanced family of IGBTs with utstandingperformances.
The built in collector-gate zener exhibits a very recise active clamping while the gate-emitter ener supplies an ESD protection.
STGB10NB37LZ Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V
VECR
Emitter-Collector Voltage
18
V
VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at Tc = 25 oC
20
A
IC
Collector Current (continuous) at Tc = 100 oC
20
A
ICM(•)
Collector Current (pulsed)
60
A
Ptot
Total Dissipation at Tc = 25 oC
125
W
Derating Factor
0.83
W/oC
Tstg
Storage Temperature
65 to 175
oC
Tj
Max.Operating Junction Temperature
175
oC
STGB10NB37LZ Features
POLYSILICONGATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGEDROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN BE (NO SUFFIX) R IN TAPE & REEL (SUFFIX "T4")