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STGB10N60L, STGB10NB37LZ, STGB10NB37LZT4

STGB10N60L, STGB10NB37LZ, STGB10NB37LZT4 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:8000  D/C:TO-

STGB10NB37LZT4 Picture

STGB10N60L, STGB10NB37LZ, STGB10NB37LZT4 Datasheet download

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Part Number: STGB10NB37LZT4

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 8000

D/C: TO-

Description: IGBT N-CHAN 20A CLAMP D2PAK

 

 
 
 
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About STGB10N60L

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Datasheet: STGB10N60L

File Size: 90811 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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Datasheet: STGB10NB37LZ

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Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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Datasheet: STGB10NB37LZT4

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STGB10N60L Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
± 15
V
IC
Collector Current (continuous) at Tc = 25 oC
25
A
IC
Collector Current (continuous) at Tc = 100 oC
20
A
ICM(•)
Collector Current (pulsed)
100
A
Ptot
Total Dissipation at Tc = 25 oC
125
W
Derating Factor
0.83
W/oC
Tstg
Storage Temperature
65 to 175
oC
 
Tj
Max.Operating Junction Temperature

175

 
oC

STGB10N60L Typical Application

 ELECTRONIC IGNITION
 LIGHT DIMMER
 STATIC RELAYS

STGB10NB37LZ General Description

Using the latest high voltage technology based n patented strip layout, SGS-Thomson has esigned an advanced family of IGBTs with utstandingperformances.

The built in collector-gate zener exhibits a very recise active clamping while the gate-emitter ener supplies an ESD protection.

STGB10NB37LZ Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V

VECR

Emitter-Collector Voltage

18

V

VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at Tc = 25 oC
20
A
IC
Collector Current (continuous) at Tc = 100 oC
20
A
ICM(•)
Collector Current (pulsed)
60
A
Ptot
Total Dissipation at Tc = 25 oC
125
W
Derating Factor
0.83
W/oC
Tstg
Storage Temperature
65 to 175
oC
 
Tj
Max.Operating Junction Temperature

175

 
oC

STGB10NB37LZ Features

 POLYSILICONGATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGEDROP
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE
 SURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN
   BE (NO SUFFIX) R IN TAPE & REEL (SUFFIX "T4")

STGB10NB37LZ Typical Application

AUTOMOTIVE IGNITION

STGB10NB37LZT4 Parameters

Technical/Catalog InformationSTGB10NB37LZT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeLogic
Voltage - Collector Emitter Breakdown (Max)440V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic1.8V @ 4.5V, 10A
Power - Max125W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STGB10NB37LZT4
STGB10NB37LZT4
497 4106 2 ND
49741062ND
497-4106-2

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