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STU404D, STU60N55F3, STU6NA100

STU404D, STU60N55F3, STU6NA100 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:TO-252  D/C:06+

STU404D, STU60N55F3, STU6NA100 Picture

STU404D, STU60N55F3, STU6NA100 Datasheet download

Five Points

Part Number: STU404D

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-252

D/C: 06+

Description: MOSFET N-CH 55V 80A IPAK

 

 
 
 
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  • STU404D

  • Pack: TO D/C: 06+& Qty: 676 Note: New&Original,stock on hand  Adddate: 2026-08-12
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  • Topchip Electronic Asia Limited   China
    Contact: Ms.lilyxie   MSN:coco2399@hotmail.com
    Tel: 86-0755-82565558
    Fax: 86-0755-83741117
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  • STU404D

  • Qty: 50K Note: NP、TO-252-4L  Adddate: 2026-08-12
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  • STU1530PL

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  • STU1855PL

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  • STU1955NL

  • D/C: 00+& Qty: 50K Note: N、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
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  •   China
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About STU10NA50

PDF/DataSheet Download

Datasheet: STU10NA50

File Size: 75150 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STU60N55F3 Suppliers

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  • STU1530PL

  • D/C: 00+& Qty: 50K Note: P、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
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  •   China
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    (2)
  • STU1855PL

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  • STU1955NL

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  • STU2030PLS

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  • STU2240NL

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  • STU2455PLS

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  • STU302S

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About STU10NA50

PDF/DataSheet Download

Datasheet: STU10NA50

File Size: 75150 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STU6NA100 Suppliers

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  • STU1530PL

  • D/C: 00+& Qty: 50K Note: P、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
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  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)
  • STU1855PL

  • D/C: 00+& Qty: 50K Note: P、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
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  •   China
    Contact: Mr.  
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    Fax: 86-0755-86021012
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  • STU1955NL

  • D/C: 00+& Qty: 50K Note: N、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
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  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)
  • STU2030PLS

  • Qty: 50K Note: P、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
  • Inquire Now
  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)
  • STU2240NL

  • D/C: 00+& Qty: 50K Note: N、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
  • Inquire Now
  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)
  • STU2455PLS

  • Qty: 50K Note: P、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
  • Inquire Now
  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)
  • STU302S

  • Qty: 50K Note: N、TO-252(D-PAK)/TO-251(I-PAK)  Adddate: 2026-08-12
  • Inquire Now
  •   China
    Contact: Mr.  
    Tel: 86-0755-86165804
    Fax: 86-0755-86021012
    (2)

About STU6NA100

PDF/DataSheet Download

Datasheet: STU6NA100

File Size: 51913 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STU60N55F3 Parameters

Technical/Catalog InformationSTU60N55F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STU60N55F3
STU60N55F3

STU60N55F3 General Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.

STU60N55F3 Features

Type
VDSS
RDS(on)
ID
Pw
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
55V
55V
55V
55V
55V
<8.5m
<8.5m
<8.5m
<8.5m
<8.5m
80A
80A
42A
80A
80A
110W
110W
30W
110W
110W
` Standard threshold drive
` 100% avalanche tested

STU60N55F3 Typical Application

· Switching application

STU6NA100 Maximum Ratings

Symbol
Parameter
Value
Units
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
Gate-source Voltage
±30
V
ID
Drain Current (continuous) at T = 25

6

A
ID
Drain Current (continuous) at T = 100
3.9
A
IDM(`)
Drain Current (pulsedTotal)
24
A
Ptot
Dissipation at T = 25
160
W
Derating Factor
1.28
W/
Tstg
Storage Temperature
-6 5to 150
Tj
Max. Operating Junction Temperature
150

(`)  Pulse width limited by safe operating area

STU6NA100 Features

· TYPICAL RDS(on) = 1.45 W
· ± 30V GATE TO SOURCE VOLTAGE RANTING
· 100% AVALANCHE TESTED
· REPETITIVE AVALANCHE DATA AT 100oC
· LOW INTRINSIC CAPACITANCE
· GATE CHARGE MINIMIZED
· REDUCED VOLTAGE SPREAD

STU6NA100 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLY (SMPS)
· CONSUMER AND INDUSTRIAL LIGHTING
· DC-AC CONVERTER FOR WELDING
    EQUIPMENT AND UNINTERRUPTABLE
    POWER SUPPLY (UPS)

STU6NA100 Connection Diagram

Symbol
Parameter
Value
Units
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
Gate-source Voltage
±30
V
ID
Drain Current (continuous) at T = 25

6

A
ID
Drain Current (continuous) at T = 100
3.9
A
IDM(`)
Drain Current (pulsedTotal)
24
A
Ptot
Dissipation at T = 25
160
W
Derating Factor
1.28
W/
Tstg
Storage Temperature
-6 5to 150
Tj
Max. Operating Junction Temperature
150

(`)  Pulse width limited by safe operating area

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