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This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
` Standard threshold drive ` 100% avalanche tested
STU60N55F3 Typical Application
· Switching application
STU6NA100 Maximum Ratings
Symbol
Parameter
Value
Units
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
Gate-source Voltage
±30
V
ID
Drain Current (continuous) at T = 25
6
A
ID
Drain Current (continuous) at T = 100
3.9
A
IDM(`)
Drain Current (pulsedTotal)
24
A
Ptot
Dissipation at T = 25
160
W
Derating Factor
1.28
W/
Tstg
Storage Temperature
-6 5to 150
Tj
Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area
STU6NA100 Features
· TYPICAL RDS(on) = 1.45 W · ± 30V GATE TO SOURCE VOLTAGE RANTING · 100% AVALANCHE TESTED · REPETITIVE AVALANCHE DATA AT 100oC · LOW INTRINSIC CAPACITANCE · GATE CHARGE MINIMIZED · REDUCED VOLTAGE SPREAD
STU6NA100 Typical Application
· HIGH CURRENT, HIGH SPEED SWITCHING · SWITCH MODE POWER SUPPLY (SMPS) · CONSUMER AND INDUSTRIAL LIGHTING · DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)