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STU410S, STU411D, STU412S

Table of contents:
Info of STU410S
Info of STU411D
Info of STU412S

STU410S, STU411D, STU412S Selling Leads, Datasheet

STU410S, STU411D, STU412S Datasheet download

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Part Number: STU410S

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STU410S Maximum Ratings

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	40	V
Gate-S ource Voltage	V_GS	±20	V
Drain Current-Continuous @T_C=25 C ^a	I_D	30	A
-Pulsed ^b	I_DM	100	A
Drain-Source Diode Forward Current	IS	8	A
Maximum Power DissipationT_a = 25	P_D	50	W
Operating Junction and Storage Temperature Range	T_J, T_STG	- 55 to +150
THERMAL CHARACTER IS TICS
Thermal Resistance, Junction-to-Case	RJC	3	/W
Thermal Resistance, Junction-to-Ambient	RJA	50	/W

STU410S Features

Surface Mount P ackage.
Super high dense cell design for low R DS (ON).
Rugged and reliable.
ESDP rotected.

STU411D Maximum Ratings

	Parameter		N-Channel	P-Channel	Units
V_DS	Drain-Source Voltage		40	-40	V
V_GS	Gate-to-Source Voltage		±20	±20	V
I_D	Drain Current-Continuous a	TC=25	15	-12	A
		TC=70	12	-10
I_DM	-Pulsed		43	-36	A
E_AS	Single Pulse Avalanche Energy		38		mJ
T_J, T_STG	Operating Junction and Storage Temperature Range		-55 to 150
P_D	Maximum Power Dissipation a	TC=25	11		W
		TC=70	6.7

STU412S Maximum Ratings

Symbol	Parameter	Limit	Unit
V_DS	Drain-Source Voltage	40	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current-Continuous ^aT_A=25 T_A=70	22 17.5	A A
I_DM	-Pulsed ^b	80	A
E_AS	Avalanche Energy ^c	10	mJ
P_D	Maximum Power Dissipation ^a T_A=25 T_A=70	25 16	W W
T_J,T_STG	Operating Junction and Storage Temperature Range	-55~150

Notes
a.Surface Mounted on FR4 Board,t<10 sec.
b.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
c.Guaranteed by design, not subject to production testing.

STU412S Features

TO-252 and TO-251 Package.
Super high dense cell design for low RDS(ON).
Rugged and reliable.
ESD Protected.

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