STU6NA90, STU7NA80, STU7NA90 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STU6NA90, STU7NA80, STU7NA90 Datasheet download

Part Number: STU6NA90
MFG: ST
Package Cooled: 09+
D/C: TO
MFG:ST Package Cooled:09+ D/C:TO
STU6NA90, STU7NA80, STU7NA90 Datasheet download

MFG: ST
Package Cooled: 09+
D/C: TO
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Datasheet: STU6NA90
File Size: 73592 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STU7NA80
File Size: 43481 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STU7NA90
File Size: 50892 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The Max220TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to arger packages.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
900 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
5.8 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.7 |
A |
|
IDM(`) |
Drain Current (pulsed) |
23.2 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
145 |
W |
| Derating Factor |
1.16 |
W/ | |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
|
TYPE |
VDSS |
RDS(on) |
ID |
| STU6NA90 |
900 V |
< 2 |
5.8 A |
The Max220TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
6.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.3 |
A |
|
IDM(`) |
Drain Current (pulsed) |
26 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
145 |
W |
| Derating Factor |
1.16 |
W/ | |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
900 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
7 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.41 |
A |
|
IDM(`) |
Drain Current (pulsed) |
28 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
160 |
W |
| Derating Factor |
1.28 |
W/ | |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
|
TYPE |
VDSS |
RDS(on) |
ID |
| STU7NA90 |
900 V |
< 1.3 |
7 A |
