STU7NB100, STU7NB100I, STU7NB90 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STU7NB100, STU7NB100I, STU7NB90 Datasheet download
Part Number: STU7NB100
MFG: ST
Package Cooled: 09+
D/C: TO
STU7NB100, STU7NB100I, STU7NB90
- Table of contents:
Info of STU7NB100
Info of STU7NB100I
Info of STU7NB90
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About STU7NB100
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Datasheet: STU7NB100
File Size: 46963 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STU10NA50
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Datasheet: STU10NA50
File Size: 75150 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STU7NB90
PDF/DataSheet Download
Datasheet: STU7NB90
File Size: 413085 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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STU7NB100 General Description
Using the latest high voltage MESH OVERLAY™process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STU7NB100 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
1000 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
7.3 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.7 |
A |
|
IDM(`) |
Drain Current (pulsed) |
29 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
160 |
W |
| Derating Factor |
1.28 |
W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
STU7NB100 Features
TYPICAL RDS(on) = 1.2
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
STU7NB100 Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
STU7NB90 General Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STU7NB90 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
| STU7NB90 | STU7NB90I | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
900 |
V | |
|
VGS |
Gate-source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 | 7.3 |
7.3 (*) |
A |
|
ID |
Drain Current (continuous) at Tc = 100 | 4.6 |
4.6 (*) |
A |
|
IDM(`) |
Drain Current (pulsed) | 29.2 |
29.2 (*) |
A |
|
PToT |
Total Dissipation at Tc = 25 | 170 |
60 |
W |
| Derating Factor | 1.36 |
0.47 |
W/ | |
|
dv/dt |
Peak Diode Recovery voltage slope |
4 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tstg |
Storage Temperature |
-65 to 150
|
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
(*) Current Limited by Package
STU7NB90 Features
TYPICAL RDS(on) = 1.1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
STU7NB90 Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT
SWITH MODE POWER SUPPLIES (SMPS)
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