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STU7NB90I, STU8NA80, STU8NB90

Table of contents:
Info of STU7NB90I
Info of STU8NA80
Info of STU8NB90

STU7NB90I, STU8NA80, STU8NB90 Selling Leads, Datasheet

MFG:ST Package Cooled:MAX220 D/C:TO

STU7NB90I, STU8NA80, STU8NB90 Datasheet download

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Part Number: STU7NB90I

MFG: ST

Package Cooled: MAX220

D/C: TO

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STU7NB90I General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STU7NB90I Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STU7NB90	STU7NB90I	Unit
V_DS	Drain-source Voltage (V_GS = 0)	900		V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	900		V
V_GS	Gate-source Voltage	±30		V
I_D	Drain Current (continuous) at T_c = 25	7.3	7.3 (*)	A
I_D	Drain Current (continuous) at T_c = 100	4.6	4.6 (*)	A
I_DM(`)	Drain Current (pulsed)	29.2	29.2 (*)	A
P_ToT	Total Dissipation at T_c = 25	170	60	W
	Derating Factor	1.36	0.47	W/
dv/dt	Peak Diode Recovery voltage slope	4		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	-65 to 150		°C
T_j	Max. Operating Junction Temperature	150		°C

(•)Pulse width limited by safe operating area (1) I_SD 7.3 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Current Limited by Package

STU7NB90I Features

TYPICAL RDS(on) = 1.1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD

STU7NB90I Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT

STU8NA80 General Description

The Max220^TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.

STU8NA80 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	800	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at Tc = 25	8.3	A
I_D	Drain Current (continuous) at Tc = 100	5.3	A
I_DM(`)	Drain Current (pulsed)	33.2	A
P_tot	Total Dissipation at Tc = 25	160	W
	Derating Factor	1.28	W/
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

STU8NA80 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS)

STU8NB90 General Description

Using the latest high voltage MESH OVERLAY^TM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STU8NB90 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (VGS = 0)	900	V
V_DGR	Drain- gate Voltage (RGS = 20 k)	900	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at Tc = 25	8.9	A
I_D	Drain Current (continuous) at Tc = 100	5.6	A
I_DM(`)	Drain Current (pulsed)	35	A
P_tot	Total Dissipation at Tc = 25	160	W
	Derating Factor	1.28	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

STU8NB90 Typical Application

SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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