MFG:Microchip Technology (VA) Category:Integrated Circuits (ICs) Package Cooled:DIP D/C:05+
TC217, TC2181, TC2185-1.8VCTTR Datasheet download
Category: Integrated Circuits (ICs)
MFG: Microchip Technology (VA)
Package Cooled: DIP
D/C: 05+
Description: IC CMOS LDO 1.8V 150MA SOT23A-5
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Datasheet: TC217
File Size: 393794 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC2001
File Size: 679172 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: TC2001
File Size: 679172 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | TC217 |
| Vendor | Cooper Industries |
| Category | Soldering, Desoldering, Rework Products |
| Accessory Type | Cord |
| For Use With/Related Products | TC201T-ND |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TC217 TC217 |
The TC217 is a frame-transfer charge-coupled-device (CCD) image sensor with two field memories. It is suitable for use in NTSC video or still-picture photography applications. Its image-sensing area is configured into 488 lines; 486 of these are active and the remaining two are used for dark reference. Each line is configured into 1158 pixels with 1134 active and 24 for dark reference. The TC217 has a standard aspect ratio of 4:3 and a standard 11-mm image-sensing-area diagonal. Its blooming protection, which is an integral part of each pixel, is based on electron-hole recombination and is activated by clocking the antiblooming gate.
One important aspect of the TC217 high-resolution sensor is its ability to simultaneously capture both fields of a TV frame. Its two independently addressable memories allow separate storage of each field and operation in a variety of modes, including EIA-170 (formerly RS-170) with true interlace, EIA-170 with pseudointerlace, and nonstandard pseudointerlace with a resolution of 972 lines.
A unique multiplexer section (see Figure 3) rearranges the horizontal pixels into vertical groups of three and separates and loads the image into the two field memories. The independent addressing of each field memory provides flexibility for different modes of operation. The interdigitated layout of the memories allows each memory to share the same bank of three serial registers and associated charge detection amplifiers (see Figure 4 and the functional block diagram). Each register and associated amplifier reads out every third column of the image area (see Figure 5). The three amplifiers are optimized dual source-followers that allow the use of off-chip double-correlated clamp-sample-and-hold amplifiers for removing KTC noise.
The TC217 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC217 is characterized for operation from 10to 40.
Supply voltage range for ADB, CDB, TDB (see Note 1)............................................ 0 V to 15 V
Input voltage range for ABG, IAG, SAG1, SAG2, SRG1, SRG2, SRG3, TRG ...........15 V to 15 V
Operating free-air temperature range ...............................................................30 to 85
Storage temperature range, TA........................................................................ 30 to 85
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ....................................260
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
| Symbol | Parameter | Rating |
| VDS VGS |
Drain-Source Voltage Gate-Source Voltage |
7.0 V -3.0 V |
| IDS IGS Pin |
Drain Current Gate Current RF Input Power, CW |
IDSS 160 A 14 dBm |
| PT TCH TSTG |
Continuous Dissipation Channel Temperature Storage Temperature |
150 mW 175 - 65 to +175 |
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
Ga = 12 dB Typical at 12 GHz
• 18 dBm Typical Power at 12 GHz
• 13 dB Typical Linear Power Gain at 12 GHz
• Breakdown Voltage : BVDGO 9V
• Lg = 0.25 m, Wg = 160 m
• 100 % DC Tested
• Micro-X Metal Ceramic Package
| Technical/Catalog Information | TC2185-1.8VCTTR |
| Vendor | Microchip Technology (VA) |
| Category | Integrated Circuits (ICs) |
| Regulator Type | Single Output |
| Package / Case | SOT-23A-5 |
| Packaging | Cut Tape (CT) |
| Regulator Topology | Positive Fixed |
| Current - Output | 150mA |
| Voltage - Output | 1.8V |
| Operating Temperature | -40°C ~ 125°C |
| Voltage - Input | 2.7 ~ 6 V |
| Number of Regulators | 1 |
| Current - Limit (Min) | 150mA |
| Current Short Circuit (Isc) | 160mA |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | TC2185 1 8VCTTR TC218518VCTTR TC2185 1 8VCCT ND TC218518VCCTND TC2185-1.8VCCT |
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