TC74AC11FN, TC74AC11P, TC74AC125F Selling Leads, Datasheet
MFG:TOS Package Cooled:SOP D/C:96p3
TC74AC11FN, TC74AC11P, TC74AC125F Datasheet download

Part Number: TC74AC11FN
MFG: TOS
Package Cooled: SOP
D/C: 96p3
MFG:TOS Package Cooled:SOP D/C:96p3
TC74AC11FN, TC74AC11P, TC74AC125F Datasheet download

MFG: TOS
Package Cooled: SOP
D/C: 96p3
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PDF/DataSheet Download
Datasheet: TC74AC11FN
File Size: 194664 KB
Manufacturer: Toshiba
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC74AC11P
File Size: 194664 KB
Manufacturer: Toshiba
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC74AC125F
File Size: 282030 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The TC74AC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
| Characteristics | Symbol | Rating | Unit |
| Supply voltage range | VCC | −0.5 to 7.0 | V |
| DC input voltage | VIN | −0.5 to VCC + 0.5 | V |
| DC output voltage | VOUT | −0.5 to VCC + 0.5 | V |
| Input diode current | IIK | ±20 | mA |
| Output diode current | IOK | ±50 | mA |
| DC output current | IOUT | ±50 | mA |
| DC VCC/ground current | ICC | ±100 | mA |
| Power dissipation | PD | 500 (DIP) (Note 2)/180 (SOP) | mW |
| Storage temperature | Tstg | -65~+150 |
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65. From Ta = 65 to 85 a derating factor of −10 mW/ should be applied up to 300 mW.

The TC74AC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
| Characteristics | Symbol | Rating | Unit |
| Supply voltage range | VCC | −0.5 to 7.0 | V |
| DC input voltage | VIN | −0.5 to VCC + 0.5 | V |
| DC output voltage | VOUT | −0.5 to VCC + 0.5 | V |
| Input diode current | IIK | ±20 | mA |
| Output diode current | IOK | ±50 | mA |
| DC output current | IOUT | ±50 | mA |
| DC VCC/ground current | ICC | ±100 | mA |
| Power dissipation | PD | 500 (DIP) (Note 2)/180 (SOP) | mW |
| Storage temperature | Tstg | -65~+150 |
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65. From Ta = 65 to 85 a derating factor of −10 mW/ should be applied up to 300 mW.

The TC74AC125/126 are advanced high speed CMOS QUAD BUS BUFFERs fabricated with silicon gate and double-layer metal wiring C2MOS technology.
They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The TC74AC125 requires the 3-state control input G to be set high to place the output into the high impedance state, whereas the TC74AC126 requires the control input to be set low to place the output into high impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
| Characteristics | Symbol | Value | Unit |
| Supply voltage range | VCC | -0.5~7.0 | V |
| DC input voltage | VIN | −0.5 to VCC + 0.5 | V |
| DC output voltage | VOUT | −0.5 to VCC + 0.5 | V |
| Input diode current | IIK | ±20 | mA |
| Output diode current | IOK | ±50 | mA |
| DC output current | IOUT | ±50 | mA |
| DC VCC / ground current | ICC | ±100 | mA |
| Power dissipation | PD | 500 (DIP) (Note 2)/180 (SOP/TSSOP) | mW |
| Storage temperature | Tstg | −65 to 150 |

