TC7MH373FK, TC7MH374FK, TC7MH4040FK Selling Leads, Datasheet
MFG:TOS Package Cooled:SSOP D/C:04+
TC7MH373FK, TC7MH374FK, TC7MH4040FK Datasheet download

Part Number: TC7MH373FK
MFG: TOS
Package Cooled: SSOP
D/C: 04+
MFG:TOS Package Cooled:SSOP D/C:04+
TC7MH373FK, TC7MH374FK, TC7MH4040FK Datasheet download

MFG: TOS
Package Cooled: SSOP
D/C: 04+
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PDF/DataSheet Download
Datasheet: TC7MH373FK
File Size: 107538 KB
Manufacturer: Toshiba
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC7MH374FK
File Size: 108652 KB
Manufacturer: Toshiba
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC7MH4040FK
File Size: 223430 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The TC7MH373FK is an advanced high speed CMOS octallatch with 3-state output fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent bipolar schottky TTL while marinating the CMOS low power
dissipation.
This 8 bit D-type latch is controlled by a latch enable input (LE) and a output enable input (OE ).When the OE input is high, the eight outputs are in a high impedance state.
An input protection circuit ensures the 0 to 7 V can be applied to the input pins can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.This circuit prevents destruction due to mismatched supply and input voltages.
|
Characteristics |
Symbol |
Rating |
Unit |
| Supply voltage range |
VCC |
−0.5~7.0 |
V |
| DC input voltage |
VIN |
−0.5~7.0 |
V |
| DC output voltage |
VOUT |
−0.5~VCC + 0.5 |
V |
| Input diode current |
IIK |
-20 |
mA |
| Output diode current |
IOK |
±20 |
mA |
| DC output current |
IOUT |
±25 |
mA |
| DC VCC/ground current |
ICC |
±75 |
mA |
| Power dissipation |
PD |
180 |
mW |
| Storage temperature |
Tstg |
−65~150 |

The TC7MH374FK is an advanced high speed CMOS octal flip-flop with 3-state output fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent bipolar schottky TTL while maintaining the CMOS low power dissipation.
This 8-bit D-type flip-flop is controlled by a clock input (CK) and an output enable input (OE ).
When the OE input is high, the eight outputs are in a high impedance state.
An input protection circuit ensures that 0 to 7 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
|
Characteristics |
Symbol |
Rating |
Unit |
| Supply voltage range |
VCC |
−0.5~7.0 |
V |
| DC input voltage |
VIN |
−0.5~7.0 |
V |
| DC output voltage |
VOUT |
−0.5~VCC + 0.5 |
V |
| Input diode current |
IIK |
-20 |
mA |
| Output diode current |
IOK |
±20 |
mA |
| DC output current |
IOUT |
±25 |
mA |
| DC VCC/ground current |
ICC |
±75 |
mA |
| Power dissipation |
PD |
180 |
mW |
| Storage temperature |
Tstg |
−65~150 |

The TC7MH4040FK is an advanced high speed CMOS 12-stage ripple-carry binary counter fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent bipolar schottky TTL while maintaining the CMOS low power
dissipation.
Setting CLR to high resets the counter to low.
A negative transition on the CK input brings one increment into the counter.
This counter provides all divided output stages, and at Q12, a 1/4096 divided frequency will be output.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
|
Characteristics |
Symbol |
Rating |
Unit |
| Power supply voltage |
VDD |
-0.5~7.0 |
V |
| DC input voltage |
VIN |
-0.5~7.0 |
V |
| DC output voltage |
VOUT |
-0.5~7.0
|
V |
| Input diode current |
IIK |
-20 |
V |
| Output diode current |
IOK |
±20 |
mA |
| DC output current |
IOUT |
±25 |
mA |
| DC VCC/ground current |
ICC/IGND |
±100 |
mA |
| Power dissipation |
PD |
180 |
Wm |
| Storage temperature |
Tstg |
-65~150 |
Note: Exceeding any of the absolute maximum ratings, even briefly, may lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

