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TC7WG00FK, TC7WG00FU, TC7WG02FC

TC7WG00FK, TC7WG00FU, TC7WG02FC Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:US-8  D/C:07+

TC7WG00FK, TC7WG00FU, TC7WG02FC Picture

TC7WG00FK, TC7WG00FU, TC7WG02FC Datasheet download

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Part Number: TC7WG00FK

 

MFG: TOSHIBA

Package Cooled: US-8

D/C: 07+

 

 

 
 
 
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About TC7WG00FK

PDF/DataSheet Download

Datasheet: TC7WG00FK

File Size: 201422 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About TC7WG00FU

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Datasheet: TC7WG00FU

File Size: 201422 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About TC7WG02FC

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Datasheet: TC7WG02FC

File Size: 181125 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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TC7WG00FK Maximum Ratings

Characteristics Symbol Ratingh Unit
Power supply viltage VCC −0.5~4.6 V
DC input voltage VIN −0.5~7.0 V
DC output voltage VOUT −0.5~4.6 (Note 1) V
−0.5~VCC + 0.5 (Note 2)
Input diode current IIK −20 mA
Output diode current IOK −20 (Note 3) mA
DC output current IOUT ±25 mA
DC VCC/GND current ICC ±50 mA
Power dissipation PD 300 (SM8)
200 (US8)
mW
Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND

TC7WG00FK Features

• High-level output current: IOH/IOL = ±8 mA (min)
                                            at VCC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.)
                                        at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG00FK Connection Diagram

TC7WG00FU Maximum Ratings

Characteristics Symbol Ratingh Unit
Power supply viltage VCC −0.5~4.6 V
DC input voltage VIN −0.5~7.0 V
DC output voltage VOUT −0.5~4.6 (Note 1) V
−0.5~VCC + 0.5 (Note 2)
Input diode current IIK −20 mA
Output diode current IOK −20 (Note 3) mA
DC output current IOUT ±25 mA
DC VCC/GND current ICC ±50 mA
Power dissipation PD 300 (SM8)
200 (US8)
mW
Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND

TC7WG00FU Features

• High-level output current: IOH/IOL = ±8 mA (min)
                                            at VCC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.)
                                        at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG00FU Connection Diagram

TC7WG02FC Maximum Ratings

Characteristics Symbol Ratingh Unit
Power supply viltage VCC −0.5~4.6 V
DC input voltage VIN −0.5~7.0 V
DC output voltage VOUT −0.5~4.6           (Note 1) V
−0.5~VCC + 0.5 (Note 2)
Input diode current IIK −20 mA
Output diode current IOK −20                    (Note 3) mA
DC output current IOUT ±25 mA
DC VCC/GND current ICC ±50 mA
Power dissipation PD 150                    (Note 4) mW
Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
Note 4: Mounted on an FR4 board.
            (25.4 mm * 25.4 mm * 1.6 t, Cu Pad: 11.56 mm2)

TC7WG02FC Features

• High-level output current: IOH/IOL = ±8 mA (min)
                                            at VCC = 3 V
• High-speed operation: tpd = 2.8 ns (typ.)
                                       at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG02FC Connection Diagram

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