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TC7WG04FK, TC7WG04FU, TC7WG08FC

TC7WG04FK, TC7WG04FU, TC7WG08FC Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:US-9  D/C:2008+

TC7WG04FK, TC7WG04FU, TC7WG08FC Picture

TC7WG04FK, TC7WG04FU, TC7WG08FC Datasheet download

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Part Number: TC7WG04FK

 

MFG: TOSHIBA

Package Cooled: US-9

D/C: 2008+

 

 

 
 
 
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About TC7WG04FK

PDF/DataSheet Download

Datasheet: TC7WG04FK

File Size: 201003 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About TC7WG04FU

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Datasheet: TC7WG04FU

File Size: 201003 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About TC70

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Datasheet: TC70

File Size: 92092 KB

Manufacturer: TELCOM [TelCom Semiconductor, Inc]

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TC7WG04FK Maximum Ratings

Characteristics Symbol Ratingh Unit
Power supply viltage VCC −0.5~4.6 V
DC input voltage VIN −0.5~7.0 V
DC output voltage VOUT −0.5~4.6           (Note 1) V
−0.5~VCC + 0.5 (Note 2)
Input diode current IIK −20 mA
Output diode current IOK −20                    (Note 3) mA
DC output current IOUT ±25 mA
DC VCC/GND current ICC ±50 mA
Power dissipation PD 300 (SM8)
200 (US8)
mW
Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND

TC7WG04FK Features

• High-level output current: IOH/IOL = ±8 mA (min)
                                              at VCC = 3 V
• High-speed operation: tpd = 2.7 ns (typ.)
                                         at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG04FK Connection Diagram

TC7WG04FU Maximum Ratings

Characteristics Symbol Ratingh Unit
Power supply viltage VCC −0.5~4.6 V
DC input voltage VIN −0.5~7.0 V
DC output voltage VOUT −0.5~4.6           (Note 1) V
−0.5~VCC + 0.5 (Note 2)
Input diode current IIK −20 mA
Output diode current IOK −20                    (Note 3) mA
DC output current IOUT ±25 mA
DC VCC/GND current ICC ±50 mA
Power dissipation PD 300 (SM8)
200 (US8)
mW
Storage temperature Tstg −65~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND

TC7WG04FU Features

• High-level output current: IOH/IOL = ±8 mA (min)
                                              at VCC = 3 V
• High-speed operation: tpd = 2.7 ns (typ.)
                                         at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG04FU Connection Diagram

TC7WG08FC Maximum Ratings

Characteristic
Symbol
Value
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage
VIN
−0.5~7.0
V
DC output voltage
VOUT
−0.5~4.6 (Note 1)
−0.5~VCC + 0.5 (Note 2)
V
Input diode current
IIK
−20
mA
Output diode current
IOK
−20 (Note 3)
mA
DC output current
IOUT
±25
mA
DC VCC/GND current
ICC
±50
mA
Power dissipation
PD
150 (Note 4)
mW
Storage temperature
Tstg
−65~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND Note 4: Mounted on an FR4 board. (25.4 mm * 25.4 mm * 1.6 t, Cu Pad: 11.56 mm2)

TC7WG08FC Features

• High-level output current: IOH/IOL = ±8 mA (min) at VCC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF
• Operating voltage range: VCC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

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