TCM853, TCM853EOH, TCM9005 Selling Leads, Datasheet
MFG:1000 Package Cooled:DIP D/C:N/A
TCM853, TCM853EOH, TCM9005 Datasheet download

Part Number: TCM853
MFG: 1000
Package Cooled: DIP
D/C: N/A
MFG:1000 Package Cooled:DIP D/C:N/A
TCM853, TCM853EOH, TCM9005 Datasheet download

MFG: 1000
Package Cooled: DIP
D/C: N/A
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PDF/DataSheet Download
Datasheet: TCM853
File Size: 77248 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TCM1030
File Size: 117401 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TCM1030
File Size: 117401 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range of input voltages from 4.5V to 10.0V and have 5mA output current capability. The TCM850/1/2 have both preset ( 4.1V) and variable ( 0.5V to 9.0V) output voltages that program with an external resistor divider. The TCM853 output voltage programs with an external positive control voltage. The TCM850/1/3 can be shutdown reducing quiescent current to less than 0.5mA (typ) over temperature, 2mA (typ) for the TCM851.
Supply Voltage (VIN to GND) .................................. 0.3V to +10.5V
VNEGOUT to GND ...................................................... 10.5V to 0.3V
VIN to VNEGOUT ............................................................... 0.3 to 21V
VOUT to GND** ....................................................... VNEGOUT to 0.3V
SHDN or OSC (Pin 4) to GND .......................... 0.3V to (VIN + 0.3V)
Power Dissipation (TA < 70)
SOIC ......................................................................................470mW
Operating Temperature Range
C Device .......................................................................... 0 to 70
E Device ................................................................... 40 to +85
Storage Temperature Range .................................. 65 to +165
Lead Temperature (Soldering, 10 sec) ................................... +300
*This is a stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
**The output may be shorted to NEGOUT or GND if the package power dissipation is not exceeded. Typical short circuit current to GND is 50mA.
` Fixed 4.1V or Adjustable 0.5V to 9V Output at 5mA
` 4.5V to 10V Input Voltage Range
` Low Output Voltage Ripple
TCM850-852 .............................................. 2mVp-p
TCM853...................................................... 1mVp-p
` 100kHz Charge Pump Switching Frequency
` Optional External Synchronizing Clock Input (TCM852)
` Logic Level Shutdown Mode ................ 0.5mA Typ.
Temperature (TCM850/852/853)
` Low Cost, 8-Pin SOIC Package
