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EM low-power technologies are well suited to combine image sensor arrays with high resolution data converters, low-noise amplifiers,bandgap references, temperature sensing blocks and nonvolatile memory blocks (EEPROM) as well as standard digital circuitry including microcontroller cores. Circuits with image sensor arrays have been realised so far in all technologies with feature sizes from 2m down to 0.5m. For new designs, the 0.5m technology is recommended because of the following reasons:
* triple metal technology (1 metal for optical shielding if needed) * improved fill-factor in pixel-matrices * linear and temperature-stable poly-silicon resistors with 240W/sq available * double-poly capacitors available, as well as EEPROM * low power and size-efficient digital cell library * 3.3V / 5V supply voltage possible .