TIL153, TIL154, TIL155 Selling Leads, Datasheet
MFG:MOTO Package Cooled:DIP-6 D/C:01+
TIL153, TIL154, TIL155 Datasheet download
Part Number: TIL153
MFG: MOTO
Package Cooled: DIP-6
D/C: 01+
TIL153, TIL154, TIL155
- Table of contents:
Info of TIL153
Info of TIL154
Info of TIL155
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About TIL153
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Datasheet: TIL153
File Size: 268715 KB
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About TIL154
PDF/DataSheet Download
Datasheet: TIL154
File Size: 268715 KB
Manufacturer:
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About TIL155
PDF/DataSheet Download
Datasheet: TIL155
File Size: 268715 KB
Manufacturer:
Download : Click here to Download
TIL153 General Description
The TIL153 is a type of optocoupler. The package includes a gaulium arsenide infrared emittering diode and an npn silicon phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compoun d. The case will withstand soldering temperature with no deformation, and device performance characteristics remai ns stable while operated in high humidity conditions. Unil weight is approximately 0.52 grams.
features of TIL153 are: (1)high voltage electrical isolation: 2500V RMS(3535V peak); (2)GaAs-diode infrared source optically coupled to a silicon NPN phototransistor; (3)direct current transfer ratio: 10% to 50%; (4)plug-in replaceme nts for TIL111 series.
The absolute maximum ratings and electrical characteristics of the TIL153 can be summarized as: (1)input-to-output RMS voltage: 2500V; (2)collector base voltage: 70V; (3)collector emitter voltage: 30V; (4)emitter collector voltage: 7 V, emitter base voltage: 7V; (5)input diode reverse voltage: 3V; (6)input diode continuous forward current at(or belo w) 25 free air temperature: 100mA; (7)continuous phototransistor power dissipation at(or below) 25 free air tem perature: 150mW; (8)lead temperature 1.6mm from case for 10 seconds: 260; (9): storage temperature range:-55 to 150. Electrical characteristics: (1)collector-base breakdown voltage(IC=10uA, IE=0, IF=0): 70V min; (2)collec tor-emitter breakdown voltage(IC=1mA, IE=0, IF=0): 30V min; (3)emitter base breakdown voltage(IE=10uA, IC=0, IF=0): 7V min; (4)transistor static foeward current transfer ratio(VCE=5V, IC=10mA, IF=0): 50 min and 100 max, etc.
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