MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:pi D/C:04+
TIP35A, TIP35B, TIP35C Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: pi
D/C: 04+
Description: TRANSISTOR NPN 100V 25A TO-247
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PDF/DataSheet Download
Datasheet: TIP35A
File Size: 161637 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: TIP35B
File Size: 76978 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIP35C
File Size: 67334 KB
Manufacturer: STMicro
Download : Click here to Download
The TIP35A is designed as complementary silicon high-power transistor for general purpose power amplifier and switching applications.
It has four features. (1)25A collector current. (2)Low leakage current which would be 1.0mA at 30 and 60V. (3)Excellent DC gain which would be 40 typ at 15A. (4)High current gain bandwidth product which would be 3.0 min at Ic=1.0A, f=1.0MHz. Those are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 60V. (2)Its collector to base voltage would be 60V. (3)Its emitter to base voltage would be 5.0Vdc. (4)Its collector current would be 25Adc for continuous and would be 40Adc for peak. (5)Its total power dissipation would be 125W and derate above 25°C would be 1.0W/°C. (6)Its operating storage junction temperature range would be from -65°C to +150°C. (7)Its unclamped inductive load would be 90mJ. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some characteristics are concluded as follow. (1)Its collector to emitter sustaining voltage would be min 60Vdc. (2)Its collector to emitter cutoff current would be max 1.0mA. (3)Its collector to emitter cutoff current would be max 0.7mA. (4)Its emitter to base cutoff current would be max 1.0mA. (5)Its DC current gain would be min 25 at Ic=1.5A and would be min 15 and typ 75 at Ic=15A. (6)Its collector to emitter saturation voltage would be max 1.8Vdc at Ic=15A and Ib=1.5A and would be max 4.0Vdc at Ic=25A and Ib=5.0A. (7)Its base to emitter on voltage would be max 2.0Vdc at Ic=15A and Vce=4.0V and would be max 4.0Vdc at Ic=25A and Vce=4.0V. (8)Its small signal current gain would be min 25. (9)Its current gain bandwidth product would be min 3.0MHz. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
| Technical/Catalog Information | TIP35C |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 25A |
| Power - Max | 125W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1.5A, 15A |
| Frequency - Transition | 3MHz |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TIP35C TIP35C 497 2609 5 ND 49726095ND 497-2609-5 |
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