TISP1072F3D, TISP1072F3DR-S, TISP1082F3 Selling Leads, Datasheet
MFG:TI Package Cooled:SMD D/C:00+
TISP1072F3D, TISP1072F3DR-S, TISP1082F3 Datasheet download
Part Number: TISP1072F3D
MFG: TI
Package Cooled: SMD
D/C: 00+
MFG:TI Package Cooled:SMD D/C:00+
TISP1072F3D, TISP1072F3DR-S, TISP1082F3 Datasheet download
MFG: TI
Package Cooled: SMD
D/C: 00+
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PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TISP1082F3
File Size: 495593 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
These dual asymmetrical transient voltage suppressors are designed for the overvoltage protection of ICs used for the SLIC (Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1xxxF3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values.
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage ( 0°C < TJ <70°C) | '1072F3 '1082F3 |
VDRM | -58 -66 |
V |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP | 120 80 70 60 50 38 50 50 45 35 |
A | |
Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 s |
D Package | ITSM | 4 | A rms |
P Package | 6 | |||
SL Package | 6 | |||
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A | diT/dt | 250 | A/µs | |
Junction temperature | TJ | -40 to+150 | °C | |
Storage temperature range | Tstg | -40 to+150 | °C |