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TISP2290, TISP2290F3, TISP2290F3D

Table of contents:
Info of TISP2290
Info of TISP2290F3
Info of TISP2290F3D

TISP2290, TISP2290F3, TISP2290F3D Selling Leads, Datasheet

MFG:TI Package Cooled:TO-220 D/C:06+

TISP2290, TISP2290F3, TISP2290F3D Picture

TISP2290, TISP2290F3, TISP2290F3D Datasheet download

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Part Number: TISP2290

MFG: TI

Package Cooled: TO-220

D/C: 06+

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TISP2290 General Description

The TISP2290 is designed specifically fortelephone equipment protection against lightningand transients induced by a.c. power lines.These devices will supress voltage transientsbetween terminals A and C, B and C, and A andB.

Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.

TISP2290 Maximum Ratings

RATING	SYMBOL	VALUE	UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)	I_TSP	150 60 50 38 50 50 45 50	A
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)	I_TSM	10	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	d_iT/dt	250	A/µs
Junction temperature	T_J	150	°C
Operating free - air temperature range		0 to 70	°C
Storage temperature range	T_stg	-40 to +150	°C
Lead temperature 1.5 mm from case for 10 s	T_lead	260	°C

TISP2290F3 General Description

These high voltage dual symmetrical transient voltage suppressor devices are designed to protect telecommunication applications with battery backed ringing against transients caused by lightning strikes and a.c. power lines. Offered in five voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

The small-outline 8 pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

TISP2290F3 Maximum Ratings

RATING		SYMBOL	VALUE	UNIT
Repetitive peak off-state voltage (0°C <TJ < 70°C)	'2240F3 '2260F3 '2290F3 '2320F3 '2380F3	V_DRM	±180 ±200 ±220 ±240 ±270	V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)		I_TSP	350 175 120 60 50 38 50 50 45 35	A
Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 s	D Package P Package SL Package	I_TSM	4 6 6	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A		d_iT/dt	250	A/µs
Junction temperature		T_J	-40 to +150	°C
Storage temperature range		T_stg	-40 to +150	°C

TISP2290F3 Connection Diagram

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