TISP4072F3, TISP4080H3, TISP4080H3BJ Selling Leads, Datasheet
MFG:B(BOURNS) Package Cooled:SOP8 D/C:0618+
TISP4072F3, TISP4080H3, TISP4080H3BJ Datasheet download
Part Number: TISP4072F3
MFG: B(BOURNS)
Package Cooled: SOP8
D/C: 0618+
MFG:B(BOURNS) Package Cooled:SOP8 D/C:0618+
TISP4072F3, TISP4080H3, TISP4080H3BJ Datasheet download
MFG: B(BOURNS)
Package Cooled: SOP8
D/C: 0618+
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Datasheet: TISP4072F3
File Size: 308870 KB
Manufacturer: POINN [Power Innovations Limited]
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PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
These low voltage symmetrical transient voltage suppressor devices are designed to protect two wire telecommunication applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities.
Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.
RATING |
SYMBOL |
VALUE |
UNIT | |
Repetitive peak off-state voltage (0°C <TJ < 70°C) |
'4072F3 '4082F3 |
VDRM |
± 58 ± 66 |
V |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP |
120 80 70 60 50 38 50 50 45 35 |
A | |
Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 s |
D Package |
ITSM |
4 |
A rms |
SL Package |
6 | |||
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A |
diT/dt |
250 |
A/µs | |
Junction temperature |
TJ |
-40 to +150 |
°C | |
Storage temperature range |
Tstg |
-40 to +150 |
°C |
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Rating |
Symbol |
Value |
Unit |
Repetitive peak off-state voltage, (see Note 1) '4070 '4080 '4095 '4115 '4125 '4145 '4165 '4180 '4200 '4220 '4240 '4250 '4265 '4290 '4300 '4350 '4395 '4400 |
VDRM |
|
V |
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) |
ITSP |
500 300 250 220 200 200 200 160 100 |
A |
Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. |
ITSM |
55 60 2.1 |
A |
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A |
diT/dt |
400 |
A/s |
Junction temperature |
TJ |
-40 to +150 |
°C |
Storage temperature range |
Tstg |
-65 to +150 |
°C |