TISP61089ASD, TISP61089B, TISP61089BD Selling Leads, Datasheet
MFG:BURNS Package Cooled:BURNS D/C:09+
TISP61089ASD, TISP61089B, TISP61089BD Datasheet download
Part Number: TISP61089ASD
MFG: BURNS
Package Cooled: BURNS
D/C: 09+
TISP61089ASD, TISP61089B, TISP61089BD
- Table of contents:
Info of TISP61089ASD
Info of TISP61089B
Info of TISP61089BD
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About TIS150-124
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Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
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About TISP61089B
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Datasheet: TISP61089B
File Size: 421030 KB
Manufacturer: ETC [ETC]
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About TISP61089BD
PDF/DataSheet Download
Datasheet: TISP61089BD
File Size: 421030 KB
Manufacturer: ETC [ETC]
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TISP61089B General Description
The TISP61089B is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61089B limits voltages that exceed the SLIC supply rail voltage. The TISP61089B parameters are specified to allow equipment compliance with Bellcore GR-1089-CORE, Issue 2 and ITU-T recommendations K.20, K.21 and K.45.
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides, the high holding current of TISP61089B SCR prevents d.c. latchup.
The TISP61089B is intended to be used with a series combination of a 40 Ω or higher resistance and a suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series resistor value of 10 Ω is recommended.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The TISP61089B buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. The TISP61089B is available in a 8-pin plastic small-outline surface mount package.
TISP61089B Maximum Ratings
|
RATING |
SYMBOL |
VALUE |
UNIT |
| Repetitive peak off-state voltage, VGK = 0 |
VDRM |
-170 |
V |
| Repetitive peak gate-cathode voltage, VKA = 0 |
VGKRM |
-167 |
V |
| Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 5/320 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs) 10/360 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 1.2/50 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 2/10 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999,Section 4) TJ = 25 °C |
ITSP |
30 40 40 100 120 170 |
A |
|
Non-repetitive peak on-state current, 60 Hz (see Notes 1 and 2) |
ITSM |
6.5 |
A |
| Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2) |
IGSM |
+40 |
A |
| Operating free-air temperature range |
TA |
-40 to +85 |
°C |
| Junction temperature |
TJ |
-40 to +150 |
°C |
| Storage temperature range |
Tstg |
-40 to +150 |
°C |
TISP61089B Connection Diagram
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