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TISP7400H3, TISP7400H3SL, TISP8210M

Table of contents:
Info of TISP7400H3
Info of TISP7400H3SL
Info of TISP8210M

TISP7400H3, TISP7400H3SL, TISP8210M Selling Leads, Datasheet

MFG:BOURNS Package Cooled:ZIP3 D/C:01+

TISP7400H3, TISP7400H3SL, TISP8210M Picture

TISP7400H3, TISP7400H3SL, TISP8210M Datasheet download

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Part Number: TISP7400H3

MFG: BOURNS

Package Cooled: ZIP3

D/C: 01+

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TISP7400H3SL General Description

The TISP7xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.

Each terminal pair, T-G, R-G and T-R, has a symmetrical voltage-triggered bidirectional thyristor protection characteristic. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.

This TISP7xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 45 A 10/1000 TISP7xxxF3SL series is available.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

TISP7400H3SL Maximum Ratings

RATING	SYMBOL	VALUE	UNIT
'7070 '7080 '7095 '7125 '7135 '7145 Repetitive peak off-state voltage, (see Note1) ' 7180 '7210 '7250 '7290 '7350 '7400	V_DRM	± 58 ± 65 ± 75 ±100 ±110 ±120 ±145 ±160 ±200 ±230 ±275 ±300	V
Non-repetitive peak on-state pulse current (see Notes 2, and 3) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual) 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)	I_TSP	500 350 250 225 200 200 200 130 100	A
Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c.	I_TSM	55 60 0.9	A
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A	di_T/dt	400	A/µs
Junction temperature	T_J	-40to+150	°C
Storage temperature range	T_stg	-65to+150	°C

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