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The Toshiba TLP172G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP,which is suitable for surface mount assembly.
The TLP172G is suitable for the modem applications which require space savings.
TLP172G Maximum Ratings
Characteristic
Symbol
Rating
Unit
LED
Forward current
IF
50
mA
Forward current derating (Ta 25°C)
IF/°C
-0.5
mA/°C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
mW
Detector
Off-state output terminal voltage
VOFF
350
V
On-state current
ION
110
mA
On-state current derating (Ta 25°C)
ION/°C
-1.1
mA/°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature
Topr
-40~85
°C
Lead solder temperature (10s)
Tsol
260
°C
Isolation voltage(AC, 1 min, R.H. 60%) (Note 1)
BVS
1500
Vrms
Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together.
TLP172G Features
4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm 1-Form-A Peak Off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 110 mA (max) On-state resistance: 35 (max t < 1 s) On-state resistance: 50 (max continuous) Isolation voltage: 1500 Vrms (min)