TLP176A, TLP176D, TLP176G Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:07+ D/C:SOP
TLP176A, TLP176D, TLP176G Datasheet download
Part Number: TLP176A
MFG: TOSHIBA
Package Cooled: 07+
D/C: SOP
TLP176A, TLP176D, TLP176G
- Table of contents:
Info of TLP176A
Info of TLP176D
Info of TLP176G
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About TLP176A
PDF/DataSheet Download
Datasheet: TLP176A
File Size: 279628 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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About TLP176D
PDF/DataSheet Download
Datasheet: TLP176D
File Size: 258804 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TLP176G
PDF/DataSheet Download
Datasheet: TLP176G
File Size: 258166 KB
Manufacturer: Toshiba
Download : Click here to Download
TLP176D General Description
The TOSHIBA TLP176D consists of gallium arsenide infrared emittingdiode optically coupled to a photo-MOSFET in a SOP, which is suitable forsurface mount assembly.
The TLP176D is suitable for modem and PBX applicationswhichrequirespace savings.
TLP176D Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit | |
| LED | Forward current |
IF |
50 |
mA |
|
Forward current derating (Ta 25 ) |
IF/ |
0.5 |
mA/ | |
|
Pulse forward current (100 s pulse, 100 pps) |
IFP |
1 |
A | |
| Reverse voltage |
VR |
5 |
V | |
| Junction temperature |
Tj |
125 |
| |
| Detector | Off-state output terminal voltage |
VOFF |
200 |
V |
| On-state current |
ION |
200 |
mA | |
| On-state RMS current derating (Ta 25 ) |
ION/ |
2.0 |
mA/ | |
| Junction temperature |
Tj |
125 |
| |
|
Storage temperature range |
Tstg |
55 to 125 |
| |
| Operating temperature range |
Topr |
40 to 85 |
| |
| Lead soldering temperature (10 s) |
Tsol |
260 |
| |
| Isolation voltage (AC, 1 min., R.H. 60%)(Note) |
BVS |
1500 |
Vrms | |
TLP176D Features
`SOP 4 pin (2.54SOP4): 1-form-A
`Peak off-state voltage: 200 V (min)
`Trigger LED current: 3 mA (max)
`On-state current: 200 mA (max)
`On-state resistance: 8(max)
`Isolation voltage: 1500 Vrms (min)
`UL recognized: UL1577, file No. E67349
TLP176D Connection Diagram
TLP176G General Description
The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require
space savings.
TLP176G Maximum Ratings
| Characteristic | Symbol | Rating | Unit | |
| LED | Forward current Forward current derating (Ta25) Pulse forward current(100s pulse,100pps) Reverse voltage Junction temperature |
I F IF/ IFP VR Tj |
60 0.7 1 5 125 |
mA |
| Detector | Offstate output terminal voltage Onstate current Onstate current derating (Ta 25) Junction temperature |
VOFF ION ION/ Tj |
35 120 1.2 125 |
V mA mW mA/ |
| Storage temperature range | Tstg | 55~125 | ||
| Operating temperature range | Topr | 40~85 | ||
| Lead soldering temperature (10s) | Tsol | 260 | ||
| Total package power dissipation | PT | 350 | mW | |
| Total package power dissipation derating (Ta25) | PT/ | -0.35 | mW / | |
| Isolation voltage (AC,1min., R.H.60%) (Note1) | BVS | 1500 | Vrms | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1): Device considered a twoterminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together.
TLP176G Connection Diagram
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