TLP217, TLP2200, TLP222A Selling Leads, Datasheet
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TLP217, TLP2200, TLP222A
- Table of contents:
Info of TLP217
Info of TLP2200
Info of TLP222A
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About TLP
PDF/DataSheet Download
Datasheet: TLP
File Size: 345950 KB
Manufacturer: STMicroelectronics
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About TLP2200
PDF/DataSheet Download
Datasheet: TLP2200
File Size: 348558 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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About TLP222A
PDF/DataSheet Download
Datasheet: TLP222A
File Size: 141080 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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TLP2200 General Description
The TOSHIBA TLP2200 consists of a GaAℓAs light emitting diode and integrated high gain, high speed photodetector.
This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull−up resistor, and built−in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / s.
TLP2200 Maximum Ratings
| Characteristic | Symbol | Min. | Typ. | Max. | Unit |
| Input current, on | IF(ON) | 1.6 | - | 5 | mA |
| Input current, off | IF(OFF) | 0 | - | 0.1 | mA |
| Supply voltage | VCC | 4.5 | - | 20 | V |
| Enable voltage high | VEH | 2.0 | - | 20 | V |
| Enable voltage low | VEL | 0 | - | 0.8 | V |
| Fan out (TTL load) | N | - | - | 4 | - |
| Operating temperature | Topr | 0 | - | 85 |
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
TLP2200 Features
`Input current: IF = 1.6mA
`Power supply voltage: VCC = 4.5~20V
`Switching speed: 2.5MBd guaranteed
`Common mode transient immunity: ±1000V / s (min.)
`Guaranteed performance over temp: 0~85°C
`Isolation voltage: 2500Vrms(min.)
`UL recognized: UL1577, file No. E67349
`Power supply voltage: VCC = 4.5~20V
`Switching speed: 2.5MBd guaranteed
`Common mode transient immunity: ±1000V / s (min.)
`Guaranteed performance over temp: 0~85°C
`Isolation voltage: 2500Vrms(min.)
`UL recognized: UL1577, file No. E67349
TLP2200 Connection Diagram
TLP222A General Description
The Toshiba TLP222A and TLP222A-2 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. These photorelays have higher output current rating than phototransistor-type photocoupler;hence, they are suitable for use as On/Off control for high current.
TLP222A Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit | |||
|
LED |
Forward current |
IF |
50 |
mA | ||
| Forward current derating (Ta 25°C) |
IF/°C |
-0.5 |
mA/°C | |||
| Peak forward current |
IFP |
1 |
A | |||
| Reverse voltage |
VR |
5 |
V | |||
| Junction temperature |
Tj |
125 |
°C | |||
|
Detector |
Off-state output terminal voltage |
VOFF |
60 |
V | ||
| On-state current | TLP222A |
ION |
500 |
mA | ||
| TLP222A-2 | One channel operation | |||||
| Two channel operations | ||||||
| Forward current derating (Ta 25°C) |
TLP222A |
ION/°C |
-5.0 |
mA/°C | ||
| TLP222A-2 | One channel operation | |||||
| Two channel operations | ||||||
| Junction temperature |
Tj |
125 |
°C | |||
| Storage temperature |
Tstg |
-55 to 125 |
°C | |||
| Operating temperature |
Topr |
-40 to 85 |
°C | |||
| Lead soldering temperature (10 s) |
Tsol |
260 |
°C | |||
| Isolation voltage (AC, 1 min, R.H. 60%) (Note 1) |
BVS |
2500 |
Vrms | |||
Note 1: LED pins are shorted together. Detector pins are also shorted together.
TLP222A Features
Normally open (1-form-A and 2-form-A) devices
Peak off-state voltage: 60 V (min)
Trigger LED current: 3 mA (max)
On-state current: 500 mA (max)
On-state resistance: 2 (max)
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1557, File No.E67349
TLP222A Connection Diagram
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