TLP250TP5F, TLP251, TLP251-1 Selling Leads, Datasheet
MFG:tosh Package Cooled:tosh D/C:dc0640
TLP250TP5F, TLP251, TLP251-1 Datasheet download
Part Number: TLP250TP5F
MFG: tosh
Package Cooled: tosh
D/C: dc0640
TLP250TP5F, TLP251, TLP251-1
- Table of contents:
Info of TLP250TP5F
Info of TLP251
Info of TLP251-1
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About TLP
PDF/DataSheet Download
Datasheet: TLP
File Size: 345950 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
About TLP251
PDF/DataSheet Download
Datasheet: TLP251
File Size: 338521 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TLP
PDF/DataSheet Download
Datasheet: TLP
File Size: 345950 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
TLP251 General Description
The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of "direct" gate drive of lower power IGBTs. (~15A)
`Input threshold current: IF=5mA(max.)
`Supply current (ICC): 11mA(max.)
`Supply voltage (VCC): 10−35V
`Output current (IO): ±0.4A(max.)
`Switching time (tpLH / tpHL): 1s(max.)
`Isolation voltage: 2500Vrms(min.)
`UL recognized: UL1577, file no.E67349
`Option(D4)
VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage : 4000VPK
TLP251 Maximum Ratings
|
Characteristic
|
Symbol |
Rating |
Unit | ||
| LED | Forward current |
IF |
20 |
mA | |
| Forward current derating (Ta 70°C) |
IF/Ta |
− 0.36 |
mA / | ||
| Peak transient forward current (Note 1) |
IFPT |
1 |
A | ||
| Reverse voltage |
VR |
5 |
V | ||
| Junction temperature |
Tj |
125 |
|||
| Detector | "H" peak output current (PW 2.0s, f 15kHz) (Note 2) |
IOPH |
− 0.4 |
A | |
| "L" peak output current (PW 2.0s, f 15kHz) (Note 2) |
IOPL |
0.4 |
A | ||
| Output voltage |
(Ta 70) |
VO |
35 |
V | |
|
(Ta = 85C) |
24 | ||||
| Supply voltage |
(Ta 70) |
VCC |
35 |
V | |
|
(Ta = 85) |
24 | ||||
| Output voltage derating (Ta 70) |
VO/Ta |
− 0.73 |
V / | ||
| Supply voltage derating (Ta 70) |
VCC/Ta |
− 0.73 |
V / | ||
| Junction temperature |
Tj |
125 |
|||
| Operating frequency (Note 3) |
f |
25 |
kHz | ||
| Operating temperature range |
Topr |
−20~85 |
|||
| Storage temperature range |
Tstg |
−55~125 |
|||
| Lead soldering temperature(10s) |
Tsol |
260 |
|||
| Isolation voltage (AC, 1min., R.H. 60%) (Note 4) |
BVS |
2500 |
Vrms | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width PW 1s, 300pps
Note 2: Expornential waveform
Note 3: Expornential waveform, IOPH −0.25A( 2.0s), IOPL +0.25A(2.0s)
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together.
Note 5: A ceramic capacitor(0.1F)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear ampifier. Failure to provide the bypassing may impair the swiching property.The total lead length between capacitor and coupler should not exceed 1cm.
TLP251 Features
·Inverter For Air Conditioner
·Induction Heating
·Transistor Inverter
·Power MOS FET Gate Drive
·IGBT Gate Drive
·Induction Heating
·Transistor Inverter
·Power MOS FET Gate Drive
·IGBT Gate Drive
TLP251 Connection Diagram
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