TLP582, TLP590, TLP590B Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:DIP5 D/C:ZIP-5
TLP582, TLP590, TLP590B Datasheet download
Part Number: TLP582
MFG: TOSHIBA
Package Cooled: DIP5
D/C: ZIP-5
TLP582, TLP590, TLP590B
- Table of contents:
Info of TLP582
Info of TLP590
Info of TLP590B
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About TLP582
PDF/DataSheet Download
Datasheet: TLP582
File Size: 354681 KB
Manufacturer: Toshiba
Download : Click here to Download
About TLP590B
PDF/DataSheet Download
Datasheet: TLP590B
File Size: 156587 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TLP590B
PDF/DataSheet Download
Datasheet: TLP590B
File Size: 156587 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
TLP582 General Description
The TLP582 is designed as toshiba photocoupler which consists of a GaAAs light emitting diode and integrated high gain, high speed photodetector.
It has seven features. (1)Input current would be max 5mA. (2)POsupply voltage would be from 4.5V to 20V. (3)Switching speed is max 400ns. (4)Common mode transient immunity would be min 5000V/us. (5)Guaranteed performance over temperature from -25°C to 85°C. (6)Isolation voltage is min 5000Vrms. (7)UL recognized UL1577, file No.E67349. Those are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1)Its forward current would be 25mA. (2)Its peak forward current would be 1A. (3)Its reverse voltage would be 5V. (4)Its output current would be 40mA. (5)Its peak output current would be 80mA. (6)Its output voltage would be from -0.5V to 20V. (7)Its supply voltage would be from -0.5V to 20V. (8)Its output power dissipation would be 100mW. (9)Its total package dissipation would be 200mW. (10)Its storage temperature range would be from -40°C to 100°C. (11)Its operating temperature range would be from -40°C to 85°C. (12)Its isolation voltage would be 5000Vrms. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics are concluded as follow. (1)Its input forward voltage would be typ 1.35V and max 1.85V. (2)Its temperature coefficient of forward voltage would be typ -2mV/°C. (3)Its input reverse current would be max 100uA. (4)Its input capacitance would be typ 170pF. (5)Its output voltage would be typ 0.4V and max 0.5V for low and would be min 2.4V and typ 3.3V for high.
It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
TLP590B General Description
The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo−diode array in a six lead plastic DIP package.
TLP590B is suitable for MOS FET gate driver.
TLP590B Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
LED |
Forward current |
IF |
50 |
mA |
| Forward current derating(Ta 25°C) |
IF / °C |
-0.5 |
mA / °C | |
| Pulse forward current(100s pulse, 100 pps) |
IFP |
1 |
A | |
| Reverse voltage |
VR |
3 |
V | |
| Junction temperature |
Tj |
125 |
°C | |
|
Detector |
Foward current |
IFD |
50 |
A |
| Reverse voltage |
VRD |
10 |
V | |
| Junction temperature |
Tj |
125 |
°C | |
| Storage temperature range |
Tstg |
-55~125 |
°C | |
| Operating temperature range |
Topr |
-40~85 |
°C | |
| Lead soldering temperature(10sec.) |
Tsol |
260 |
°C | |
| Isolation voltage(AC, 1 min., R.H. 60%) (Note 1) |
BVS |
2500 |
Vrms | |
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together.
TLP590B Features
UL recognized: UL1577, file No. E67349
TLP590B Connection Diagram
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