TLP628-4, TLP628G, TLP628GB Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:DIP D/C:05+
TLP628-4, TLP628G, TLP628GB Datasheet download
Part Number: TLP628-4
MFG: TOSHIBA
Package Cooled: DIP
D/C: 05+
MFG:TOSHIBA Package Cooled:DIP D/C:05+
TLP628-4, TLP628G, TLP628GB Datasheet download
MFG: TOSHIBA
Package Cooled: DIP
D/C: 05+
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PDF/DataSheet Download
Datasheet: TLP628-4
File Size: 269661 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TLP
File Size: 345950 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TLP
File Size: 345950 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide infrared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector−emitter breakdown voltage.
The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628−4 provide four isolated channels per package.
• Collector−emitter voltage: 350 V (min.)
• Current transfer ratio: 50% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
Characteristic |
Symbol |
Rating |
Unit |
Forward current |
IF |
50 |
mA |
Forward current derating |
IF / |
−0.5 (Ta 25) |
mA / °C |
Pulse forward current |
IFP |
1 (100s pulse, 100pps) |
A |
Reverse voltage |
VR |
5 |
V |
Junction temperature |
Tj |
125 |
|
Collector−emitter voltage |
VCEO |
350 |
V |
Emitter−collector voltage |
VECO |
7 |
V |
Collector current |
IC |
50 |
mA |
Collector power dissipation (1 circuit) |
PC |
100 |
mW |
Collector power dissipation derating (Ta 25, 1 circuit) |
PC / |
-1.0 |
mW/ |
Junction temperature |
Tj |
125 |
|
Storage temperature range |
Tstg |
−55~125 |
|
Operating temperature range |
Topr |
−55~100 |
|
Lead soldering temperature |
Tsol |
260 (10s) |
|
Total package power dissipation (1 circuit) |
PT |
150 |
mW |
Total package power dissipation derating (Ta 25, 1 circuit) |
PT / |
−1.5 |
mW/ |
Isolation voltage |
BVS |
5000 (AC, 1min., R.H. 60%) (Note 1) |
Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.