TLP741, TLP741G, TLP741J Selling Leads, Datasheet
MFG:TOS Package Cooled:DIP6 D/C:07+
TLP741, TLP741G, TLP741J Datasheet download
Part Number: TLP741
MFG: TOS
Package Cooled: DIP6
D/C: 07+
TLP741, TLP741G, TLP741J
- Table of contents:
Info of TLP741
Info of TLP741G
Info of TLP741J
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About TLP741(D4)SERIES
PDF/DataSheet Download
Datasheet: TLP741(D4)SERIES
File Size: 166686 KB
Manufacturer: Toshiba
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About TLP741G
PDF/DataSheet Download
Datasheet: TLP741G
File Size: 525095 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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About TLP741J
PDF/DataSheet Download
Datasheet: TLP741J
File Size: 304310 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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TLP741G General Description
The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
TLP741G Maximum Ratings
| Characteristic | Symbol | Rating | Unit | |
| LED | Forward current | IF | 60 | mA |
| Forward current derating (Ta 39°C) | IF /°C | -0.7 | mA / °C | |
| Peak forward current (100 s pulse, 100 pps) | IFP | 1 | A | |
| Power dissipation | PD | 100 | mW | |
| POwer dissipation derating (Ta 25°C) | PD / °C | -1.0 | mW / °C | |
| Reverse voltage | VR | 5 | V | |
| Junction temperature | Tj | 125 | °C | |
| Detector | Peak forward voltage(RGK = 27k) | VDRM | 400 | V |
| Peak reverse voltage(RGK = 27k) | VRRM | 400 | V | |
| Onstate current | IT(RMS) | 150 | mA | |
| Onstate current derating (Ta 25°C) | IT / °C | 2.0 | mA / °C | |
| Peak onstate current (100s pulse, 120pps) | ITP | 3 | A | |
| Peak one cycle surge current | ITSM | 2 | A | |
| Peak reverse gate voltage | VGM | 5 | V | |
| Power dissipation | PD | 150 | mW | |
| Power dissipation derating (Ta 25°C) | PC / °C | -1.5 | mW / °C | |
| Junction temperature | Tj | 125 | °C | |
| Storage temperature range | Tstg | -55-125 | °C | |
| Operating temperature range | Topr | -40-100 | °C | |
| Lead soldering temperature (10 s) | Tsol | 260 | °C | |
| Total package power dissipation | PT | 250 | mW | |
| Total package power dissipation derating (Ta 25°C) | PT / °C | -2.5 | mW / °C | |
| Isolation voltage (AC, 1 min., R.H. 60%) | BVS | 4000 | Vrms | |
TLP741G Features
· Peak off−state voltage: 400V(min.)
· Trigger LED current: 10mA(max.)
· On−state current: 150mA(max.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 6617
BS EN60950: 1992
Certificate no. 7366
· Isolation voltage: 4000Vrms(min.)
· Option (D4) type
VDE approved: DIN VDE0884/08, 87
Certificate no. 65640
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
· Trigger LED current: 10mA(max.)
· On−state current: 150mA(max.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 6617
BS EN60950: 1992
Certificate no. 7366
· Isolation voltage: 4000Vrms(min.)
· Option (D4) type
VDE approved: DIN VDE0884/08, 87
Certificate no. 65640
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
TLP741G Connection Diagram
TLP741J General Description
The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
TLP741J Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| LED Forward current | IF | 60 | mA |
| LED Forward current derating (Ta => 25) |
IF/ | -0.7 | mA/ |
| LED Peak forward current (100 s pulse, 100 pps) |
IFP | 1 | A |
| LED Power dissipation | PD | 100 | mW |
| LED Power dissipation derating (Ta 25) | PD / | -1.0 | mW / |
| LED Reverse voltage | VR | 5 | V |
| LED Junction temperature | Tj | 125 | |
| Detector Peak forward voltage (RGK = 27 k) | VDRM | 600 | V |
| Detector Peak reverse voltage (RGK = 27 k) | VRRM | 600 | V |
| Detector On−state current | IT(RMS) | 150 | mA |
| Detector On−state current derating (Ta 25) | IT / | -2.0 | mA / |
| Detector Peak on−state current (100s pulse, 120 pps) | ITP | 3 | A |
| Detector Peak one cycle surge current | ITSM | 2 | A |
| Detector Peak reverse gate voltage | VGM | 5 | V |
| Detector Power dissipation | PD | 150 | mW |
| Detector On-state current derating (Ta => 25) |
PD/ | -2.0 | mA/ |
| Detector Junction temperature | Tj | 100 | |
| Operating temperature range | Topr | −55 to 120 | |
| Storage temperature range | Tstg | −55 to 100 | |
| Lead soldering temperature (10 s) | Tsol | 260 | |
| Total package power dissipation | PT | 250 | mW |
| Total package power dissipation derating (Ta 25) | PT / | -3.3 | mW / |
| Isolation voltage (AC, 1 min, R.H. <= 60%) (Note 1) |
BVS | 400 | Vrms |
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