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TLP750D4, TLP751, TLP759

Table of contents:
Info of TLP750D4
Info of TLP751
Info of TLP759

TLP750D4, TLP751, TLP759 Selling Leads, Datasheet

MFG:tosh Package Cooled:tosh D/C:dc98

TLP750D4, TLP751, TLP759 Datasheet download

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Part Number: TLP750D4

MFG: tosh

Package Cooled: tosh

D/C: dc98

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TLP751 General Description

The TOSHIBA TLP751 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode− transistor. This unit is 8−lead DIP.

TLP751 has internal base connection. This base pin should be used for analog application or enable operation. If base pin is open, output signal will be noisy by environmental condition. For this case, TLP750 is suitable.

TLP751 Maximum Ratings

Characteristic		Symbol	Rating	Unit
LED	Forward current (Note 1) Pulse forward current (Note 2) Peak transient forward current (Note 3) Reverse voltage Diode power dissipation (Note 4)	I_F I_FP I_FPT V_R P_D	25 50 1 5 45	mA mA A V mW
Detector	Output current Peak output current Output voltage Supply voltage	I_O I_OP V_O V_CC	8 16 −0.5~15 −0.5~15	mA mA V V
Detector	Base current Output power dissipation (Note 5) Emitter−base reverse voltage	I_B P_O V_EB	5 100 5	mA mW V
Operating temperature range Storage temperature range Lead solder temperature(10s) (Note 6) Isolation voltage (AC,1min.,R.H. 60%) (Note 7)		T_opr T_stg T_sol B_VS	−55~100 −55~125 260 5000	Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. eliability test report and estimated failure rate, etc).

(Note 1) Derate 0.8mA above 70
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / above 70
(Note 3) Pulse width 1s,300pps.
(Note 4) Derate 0.9mW / above 70
(Note 5) Derate 2mW / above 70
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.

TLP751 Features

• Switching speed: tpHL = 0.3s (typ.)
tpLH = 0.5s (typ.)(RL=1.9k)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002,
Certificate no. 8869
BS EN60950-1: 2002,
Certificate no. 8870
• Isolation voltage: 5000Vrms(min.)
• Option(D4)type
VDE approved: DIN EN 60747-5-2,
Certificate no. 40009302
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK

(Note) When a EN 60747-5-2 approved type is needed, please designate the "Option(D4)"

• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)

TLP751 Connection Diagram

TLP759 General Description

The TLP759 is designed as toshiba photocoupler which consists of a GaAAs high-output light emitting diode and high speed detector of one chip photo diode transistor.

It has six features. (1)Isolation voltage would be min 5000Vrms. (2)Switching speed is typ 0.2us for tpHL and ty 0.3us for tpLH. (3)TTL compatible. (4)UL recognized UL1577, file No.E67349. (5)Maximum operating insulation voltage 890Vpk. (6)Highest permissible over voltage would be 6000Vpk. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its forward current would be 25mA. (2)Its pulse forward current would be 50mA. (3)Reverse voltage would be 5V. (4)Its peak transient forward current would be 1A. (5)Its diode power dissipation would be 45mW. (6)Its output current would be 8mA. (7)Its peak output current would be 16mA. (8)Its output voltage would be from -0.5V to 20V. (9)Its supply voltage would be from -0.5V to 30V. (10)Its output power dissipation would be 100mW. (11)Its operating temperature range would be from -55°C to 100°C. (12)Its storage temperature range would be from -55°C to 125°C. (13)Its lead solder temperature would be 260°C. (14)Its isolation voltage (AC 1min, RH<=60%, Ta=25°C) would be 2500V.

Also some electrical characteristics are concluded as follow. (1)Its forward voltage would be typ 1.65V and max 1.85V. (2)Its reverse current would be max 10uA. (3)Its capacitance between terminal would be typ 45pF. (4)Its high level output current would be typ 3uA and max 500uA. (5)Its supply voltage would be min 30V. (6)Its output voltage would be min 20V.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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