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TPC6004(TE85LF), TPC6005, TPC6101

Table of contents:
Info of TPC6004(TE85LF)
Info of TPC6005
Info of TPC6101

TPC6004(TE85LF), TPC6005, TPC6101 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOT-163 D/C:05+

TPC6004(TE85LF), TPC6005, TPC6101 Picture

TPC6004(TE85LF), TPC6005, TPC6101 Datasheet download

Five Points

Part Number: TPC6004(TE85LF)

MFG: TOSHIBA

Package Cooled: SOT-163

D/C: 05+

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TPC6005 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	6	A
Drain current	Pulse (Note 1)	I_DP	24	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	5.8	mJ
Avalanche current		I_AR	3	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

TPC6005 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 21 m (typ.)
`High forward transfer admittance: |Yfs| =10 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 20 V)
`Enhancement-mode: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 200 A)

TPC6101 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	-20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	−4.5	A
Drain current	Pulse (Note 1)	I_DP	-18	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	3.3	mJ
Avalanche current		I_AR	-2.25	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution.

TPC6101 Features

`Low drain-source ON resistance: R _{DS (ON)} = 48 m (typ.)
`High forward transfer admittance: |Yfs| = 8.2 S (typ.)
`Low leakage current: I_DSS = −10 A (max) (V_DS = −20 V)
`Enhancement-model: V_th = −0.5 to −1.2 V (V_DS = −10 V, I_D = −200 A)

TPC6101 Connection Diagram

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