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TPC6102, TPC6103, TPC6104

Table of contents:
Info of TPC6102
Info of TPC6103
Info of TPC6104

TPC6102, TPC6103, TPC6104 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:06+ D/C:45000

TPC6102, TPC6103, TPC6104 Datasheet download

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Part Number: TPC6102

MFG: TOSHIBA

Package Cooled: 06+

D/C: 45000

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TPC6103 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	-12	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	-12	V
Gate-source voltage		V_GSS	±8	V
Drain current	DC (Note 1)	_ID	-5.5	A
Drain current	Pulse (Note 1)	I_DP	-22	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	5.3	mJ
Avalanche current		I_AR	−2.75	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution

TPC6103 Features

• Low drain-source ON resistance: R_{DS (ON)} = 29 m (typ.)
• High forward transfer admittance: |Yfs| = 13 S (typ.)
• Low leakage current: I_DSS= −10 A (max) (V_DS = −12 V)
• Enhancement mode: V_th = −0.5 to −1.2 V (V_DS = −10 V,I_D = −200 A)

TPC6104 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	-20	V
Gate-source voltage		V_GSS	±8	V
Drain current	DC (Note 1)	_ID	−5.5	A
Drain current	Pulse (Note 1)	I_DP	-22	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	4.9	mJ
Avalanche current		I_AR	−2.75	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

TPC6104 Features

• Low drain-source ON resistance: R_{DS (ON)} = 33 m (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: ID_SS = −10 A (max) (V_DS = −20 V)
• Enhancement mode: V_th = −0.5 to −1.2 V (V_DS= −10 V, I_D= −200 A)

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