TPC6603, TPC6901, TPC71550DCKR Selling Leads, Datasheet
MFG:2000 Package Cooled:TOSHIBA D/C:SOT
TPC6603, TPC6901, TPC71550DCKR Datasheet download
Part Number: TPC6603
MFG: 2000
Package Cooled: TOSHIBA
D/C: SOT
TPC6603, TPC6901, TPC71550DCKR
- Table of contents:
Info of TPC6603
Info of TPC6901
Info of TPC71550DCKR
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPC6603 Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit | |
|
Collector-base voltage |
VCBO |
−30 |
V | |
|
Collector-emitter voltage |
VCEO |
−20 |
V | |
|
Emitter-base voltage |
VEBO |
-7 |
V | |
|
Collector current |
DC |
IC |
−3.0 |
A |
|
Pulse |
ICP |
−5.0 | ||
|
Base current |
IB |
−0.3 |
mA | |
|
Collector power dissipation |
DC |
PC (Note 1) |
0.8 |
W |
|
t = 10 s |
1.6 | |||
|
Junction temperature |
Tj |
150 |
||
|
Storage temperature range |
Tstg |
−55 to 150 |
||
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook "Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
TPC6603 Features
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 40 ns (typ.)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 40 ns (typ.)
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