TPC8010H, TPC8010-H, TPC8010-H(P/B) Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:02 D/C:2007+
TPC8010H, TPC8010-H, TPC8010-H(P/B) Datasheet download

Part Number: TPC8010H
MFG: TOSHIBA
Package Cooled: 02
D/C: 2007+
MFG:TOSHIBA Package Cooled:02 D/C:2007+
TPC8010H, TPC8010-H, TPC8010-H(P/B) Datasheet download

MFG: TOSHIBA
Package Cooled: 02
D/C: 2007+
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PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC8010-H
File Size: 350650 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
| Characteristics |
Symbol |
Rating |
Unit | |
| Drain-source voltage |
VDSS |
30 |
V | |
| Drain-gate voltage (RGS = 20 kΩ) |
VDGR |
30 |
V | |
| Gate-source voltage |
VGSS |
±20 |
V | |
| Drain current | DC (Note 1) |
ID |
11 |
A |
| Pulse (Note 1) |
IDP |
44 | ||
|
Drain power dissipation (t = 10 s) (Note 2a) |
PD |
1.9 |
W | |
|
Drain power dissipation (t = 10 s) (Note 2b) |
PD |
1.0 |
W | |
|
Single pulse avalanche energy (Note 3) |
EAS |
157 |
mJ | |
| Avalanche current |
IAR |
11 |
A | |
|
Repetitive avalanche energy (Note 2a) (Note 4) |
EAR |
0.19 |
mJ | |
| Channel temperature |
Tch |
150 |
°C | |
| Storage temperature range |
Tstg |
−55 to 150 |
°C | |
Note: For(Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
·Small footprint due to small and thin package
·High speed switching
·Small gate charge: Qg = 18 nC (typ.)
·Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.)
·High forward transfer admittance: |Yfs| = 11 S (typ.)
·Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
·Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)

