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TPC8018-H, TPC8018-H(T2LIB3QM), TPC8020-H

Table of contents:
Info of TPC8018-H
Info of TPC8018-H(T2LIB3QM)
Info of TPC8020-H

TPC8018-H, TPC8018-H(T2LIB3QM), TPC8020-H Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SO-8 D/C:0703+

TPC8018-H, TPC8018-H(T2LIB3QM), TPC8020-H Picture

TPC8018-H, TPC8018-H(T2LIB3QM), TPC8020-H Datasheet download

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Part Number: TPC8018-H

MFG: TOSHIBA

Package Cooled: SO-8

D/C: 0703+

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TPC8020-H General Description

      TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and it has three ways of applications which is as follows: The first one is high-speed and high-efficiency DC-DC converter. The second one is notebook PC . The third one is portable equipment . At the same time, it also has seven unique features: The first one is small footprint due to small and thin package. The second one is high-speed switching. The third one is small gate charge which is 23 nC typ. The forth one is low drain-source ON resistance which is 6.8 m typ. The fifth one is high forward transfer admittance which is 32 S typ. The sixth one is low leakage current which is 10 A max when VDS is 30 V. The seventh one is enchancement mode that Vth is from 1.1 V to 2.3 V when V_DS is 10 V and I_D is 1 mA.
     There are some maximum ratings under the condition that Ta is 25. Drain-source voltage (V_DSS) is 30 V . Drain-gate voltage (V_DGR) is 30 V when RGS is 20 K.Gate-source voltage(V_GSS) is ±20 V. Drain current(DC)(I_D) is 13 A. Drain current(pulse) (I_DP) is 52A. Drain power dissipation( t is 10 s) (PD) is 1.0W. Single pulse avalanche energy (E_AS) is 110 mJ. Channel temperature(Tch) is 150. Storage temperature range (Tstg) is -55 to 150. Besides, there are also some thermal characteristics about it. Thermal resistance, channel to ambient(t is 10 s) (Rth(ch-a)) is 65.8/W. Thermal resistance , channel to ambient(t is 10 s) (R_th(ch-a) ) is 125/W.There are also some electrical characteristics (Ta is 25) you will want to know about it. Gate leakage current (I_GSS) is ±10A max when VGS is ±16V and VDS is 0. Drain cut-OFF current (I_DSS)(V_DS = 30 V, V _GS = 0 V) is   10 A max. Drain-source breakdown voltage(V_(BR) _DSS)(I_D = 10 mA, V_GS = 0 V) is 30 V min.Drain-source breakdown voltage((B_R) DSX)(I_D = 10 mA, V_GS = -20 V) is 15 V min.Gate threshold voltage(Vth)(V_DS = 10 V, I_D = 1 mA) is 1.1 V min and 2.3 V max.Drain-source ON resistance (R_{DS (ON)} )(V_GS = 4.5 V , I_D = 6.5) is 9.5 m typ and 13m max..Drain-source ON resistance (R_DS _(ON) )(V_GS = 10 V, I_D = 6.5 A) is 6.8 m typ and 9 m max.Forward transfer admittance (|Yf s|)(V_DS = 10 V, ID = 6.5 A ) is 16 S min and 32 S max. Input capacitance (Ciss)(V_DS= 10 V, V_GS = 0 V, f = 1 MHz) is 1395 pF.Reverse transfer capacitance (Crss)(V_DS = 10 V, V_GS = 0 V, f = 1 MHz) is 140 pF typ. Output capacitance(Coss)(V_DS= 10 V, VGS = 0 V, f = 1 MHz) is 525 pF .
     In a word , this is just a simple introduction of this kind of product, and if you are interested in it or you want to know detailed information about it, please come to know more about our web. Thanks for your concern of our infomation!

TPC8020-H Maximum Ratings

TPC8020-H Features

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