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TPC8114, TPC8115, TPC8201

Table of contents:
Info of TPC8114
Info of TPC8115
Info of TPC8201

TPC8114, TPC8115, TPC8201 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:2005+ D/C:100

TPC8114, TPC8115, TPC8201 Datasheet download

Five Points

Part Number: TPC8114

MFG: TOSHIBA

Package Cooled: 2005+

D/C: 100

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TPC8201 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	5	A
Drain current	Pulse (Note 1)	I_DP	20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	32.5	mJ
Avalanche current		I_AR	5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8201 Features

`Low drain−source ON resistance : R _{DS (ON)} = 37 m (typ.)
`High forward transfer admittance : |Yfs| = 6 S (typ.)
`Low leakage current : I_DSS = 10 A (max) (V_DS= 30 V)
`Enhancement−mode : V_th = 0.8~2.0 V (V_DS= 10 V, I_D= 1 mA)

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