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TPC8305, TPC8305-TE12L, TPC8401

Table of contents:
Info of TPC8305
Info of TPC8305-TE12L
Info of TPC8401

TPC8305, TPC8305-TE12L, TPC8401 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOP8 D/C:07+

TPC8305, TPC8305-TE12L, TPC8401 Datasheet download

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Part Number: TPC8305

MFG: TOSHIBA

Package Cooled: SOP8

D/C: 07+

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TPC8305 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	-5	A
Drain current	Pulse (Note 1)	I_DP	-20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.0	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	32.5	mJ
Avalanche current		I_AR	-5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.10	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8305 Features

`Small footprint due to small and thin package
`Low drain−source ON resistance : R_{DS (ON)} = 24 m (typ.)
`High forward transfer admittance : |Yfs| = 12 S (typ.)
`Low leakage current : I_DSS= −10 A (max) (V_DS = −20 V)
`Enhancement−mode : V_th = −0.5~ −1.2 V (V_DS = −10 V, I_D= −1mA)

TPC8401 Maximum Ratings

Characteristics		Symbol	Rating		Unit
Characteristics		Symbol	P Channel	N Channel	Unit
Drain-source voltage		V_DSS	−30	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−30	30	V
Gate-source voltage		V_GSS	±20	±20	V
Drain current	DC (Note 1)	_ID	−4.5	6	A
Drain current	Pulse (Note 1)	I_DP	−18	24	A
Drain power dissipation (t = 5 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	1.5	W
Drain power dissipation (t = 5 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.0	1.0	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	0.75	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	26.3 (Note 4a)	46.8 (Note 4b)	mJ
Avalanche current		I_AR	−4.5	6	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.10		mJ
Channel temperature		_Tch	150		°C
Storage temperature range		T_stg	−55~150		°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8401 Features

`Low drain−source ON resistance : P Channel R_{DS (ON)} = 27 m (typ.) N Channel R_{DS (ON)} = 14 m (typ.)
`High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.)
`Low leakage current : P Channel I_DSS = −10 A (V_DS = −30 V) N Channel I_DSS = 10 A (V_DS = 30 V)
`Enhancement−mode : P Channel V_th = −0.8~ −2.0 V (V_DS = −10 V, I_D = −1mA) N Channel V_th = 0.8~2.5 V (V_DS = 10 V, I_D = 1mA)

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