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TPC8402, TPC8402-TE12L, TPC8403

Table of contents:
Info of TPC8402
Info of TPC8402-TE12L
Info of TPC8403

TPC8402, TPC8402-TE12L, TPC8403 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOP8 D/C:01+

TPC8402, TPC8402-TE12L, TPC8403 Datasheet download

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Part Number: TPC8402

MFG: TOSHIBA

Package Cooled: SOP8

D/C: 01+

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TPC8402 Maximum Ratings

Characteristics		Symbol	Rating		Unit
Characteristics		Symbol	P Channel	N Channel	Unit
Drain-source voltage		V_DSS	−30	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−30	30	V
Gate-source voltage		V_GSS	±20	±20	V
Drain current	DC (Note 1)	_ID	−4.5	5	A
Drain current	Pulse (Note 1)	I_DP	−18	20	A
Drain power dissipation (t = 5 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	1.5	W
Drain power dissipation (t = 5 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.0	1.0	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	0.75	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	26.3 (Note 4a)	32.5 (Note 4b)	mJ
Avalanche current		I_AR	−4.5	5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.10		mJ
Channel temperature		_Tch	150		°C
Storage temperature range		T_stg	−55~150		°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8402 Features

`Low drain−source ON resistance : P Channel R _{DS (ON)} = 27 m (typ.) N Channel R _{DS (ON)} = 37 m (typ.)
`High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.)
`Low leakage current : P Channel I_DSS= −10 A (V_DS = −30 V) N Channel I_DSS = 10 A (V_DS= 30 V)
`Enhancement−mode : P Channel V_th = −0.8~ −2.0 V (V_DS = −10 V, I_D= −1mA) N Channel V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1mA)

TPC8403 Maximum Ratings

Characteristics		Symbol	Rating		Unit
Characteristics		Symbol	P Channel	N Channel	Unit
Drain-source voltage		V_DSS	−30	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−30	30	V
Gate-source voltage		V_GSS	±20	±20	V
Drain current	DC (Note 1)	_ID	−4.5	6	A
Drain current	Pulse (Note 1)	I_DP	−18	24	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	26.3 (Note 4a)	32.5 (Note 4b)	mJ
Avalanche current		I_AR	−4.5	6	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.11		mJ
Channel temperature		_Tch	150		°C
Storage temperature range		T_stg	−55~150		°C

Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.

TPC8403 Features

• Low drain-source ON resistance: P Channel R _{DS (ON)} = 45 m (typ.) N Channel R_{DS (ON)} = 25 m (typ.)
• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.)
• Low leakage current: P Channel I_DSS = −10 A (V_DS = −30 V) N Channel I_DSS = 10 A (V_DS= 30 V)
• Enhancement mode : P Channel V_th = −1.0~−2.2 V (V_DS= −10 V, I_D= −1 mA) : N Channel V_th = 1.3~2.5 V (V_DS = 10 V, I_D= 1 mA)

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