TPCF8001, TPCF8001(T5LLNVF), TPCF8101 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SMD D/C:06+
TPCF8001, TPCF8001(T5LLNVF), TPCF8101 Datasheet download
Part Number: TPCF8001
MFG: TOSHIBA
Package Cooled: SMD
D/C: 06+
TPCF8001, TPCF8001(T5LLNVF), TPCF8101
- Table of contents:
Info of TPCF8001
Info of TPCF8001(T5LLNVF)
Info of TPCF8101
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCF8001 Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit | |
| Drain-source voltage Drain-gate voltage (RGS=20k) Gate-source voltage |
VDSS VDGR VGSS |
30 30 ±20 |
V V V | |
| Drain current | DC (Note 1) |
ID |
7 |
A |
| Pulse (Note 1) |
IDP |
28 | ||
| Drain power dissipation (T=5s)(Note 2a) Drain power dissipation (T=5s)(Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range |
PD PD EAS IAR EAR Tch Tstg |
2.5 0.7 8 3.5 0.25 150 -55~150 |
W W mJ A mJ | |
Note: For Notes 1 to 5, refer to the next page
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
TPCF8001 Typical Application
`Low drain-source ON resistance: RDS(ON) = 19 m (typ.)
`High forward transfer admittance: |Yfs| = 8 S (typ.)
`Low leakage current: IDSS = 10A (max.) (VDS = 30 V)
`Enhancement mode: Vth= 1.3 to 2.5 V (VDS = 10 V, ID= 1mA)
`High forward transfer admittance: |Yfs| = 8 S (typ.)
`Low leakage current: IDSS = 10A (max.) (VDS = 30 V)
`Enhancement mode: Vth= 1.3 to 2.5 V (VDS = 10 V, ID= 1mA)
TPCF8001 Connection Diagram
TPCF8101 Maximum Ratings
| Characteristic | Symbol | Rating | Unit | |
| Drain-source voltage | VDSS | -12 | V | |
| Drain-gate voltage (RGS=20 k) | VDGR | -12 | V | |
| Gate-source voltage | VGSS | ±8 | V | |
| Drain current | DC (Note 1) | ID | -6 | A |
| Pulsed (Note 1) | IDP | -24 | ||
| Power dissipation (t= 5 s) (Note 2a) | PD | 2.5 | W | |
| Power dissipation (t= 5 s) (Note 2b) | PD | 0.7 | W | |
| Single pulse avalanche energy (Note 3) | EAS | 6.3 | mJ | |
| Avalanche current | IAR | -3 | A | |
| Repetitive avalanche energy (Note 4) | EAR | 0.25 | mJ | |
| Channel temperature | Tch | 150 | ||
| Storage temperature range | Tstg | -55~150 | ||
TPCF8101 Features
`Low drain-source ON resistance: RDS (ON) = 22 m (typ.)
`High forward transfer admittance: |Yfs| = 14 S (typ.)
`Low leakage current: IDSS = −10 A (max) (VDS = −12 V)
`Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
`High forward transfer admittance: |Yfs| = 14 S (typ.)
`Low leakage current: IDSS = −10 A (max) (VDS = −12 V)
`Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
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