TPCF8102, TPCF8102/F3B, TPCF8103 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:VS-8 D/C:60000
TPCF8102, TPCF8102/F3B, TPCF8103 Datasheet download
Part Number: TPCF8102
MFG: TOSHIBA
Package Cooled: VS-8
D/C: 60000
TPCF8102, TPCF8102/F3B, TPCF8103
- Table of contents:
Info of TPCF8102
Info of TPCF8102/F3B
Info of TPCF8103
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About TPCF8102
PDF/DataSheet Download
Datasheet: TPCF8102
File Size: 229429 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCF8102 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
Drain-source voltage |
VDSS |
-20 |
V | |
|
Drain-gate voltage (RGS = 20 k) |
VDGR |
-20 |
V | |
|
Gate-source voltage |
VGSS |
±8 |
V | |
|
Drain current |
DC (Note 1) |
ID |
-6 |
A |
|
Pulse (Note 1) |
IDP |
-24 | ||
|
Drain power dissipation (t = 5s) (Note 2a) |
PD |
2.5 |
W | |
|
Drain power dissipation (t =5 s) (Note 2a) |
PD |
0.7 |
W | |
|
Single pulse avalanche energy (Note3) |
EAS |
5.9 |
mJ | |
|
Avalanche current |
IAR |
-3 |
A | |
|
Repetitive avalanche energy (Note 4) |
EAR |
0.25 |
mJ | |
|
Channel temperature |
Tch |
150 |
°C | |
|
Storage temperature range |
Tstg |
−55~150 |
°C | |
Note: Note 1, Note 2, Note 3, Note 4 and Note 5:See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..
TPCF8102 Features
• Low drain-source ON resistance: R DS (ON) = 24 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
TPCF8103 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Avalanche current |
VDSS |
-20 |
V | |
| Drain-gate voltage (RGS = 20 k) |
VDGR |
-20 |
V | |
| Gate-source voltage |
VGSS |
±8 |
V | |
| Collector current |
DC (Note1) |
ID |
-2.7 |
A |
| Pulse (Note1) |
IDP |
-10.8 | ||
| forward current |
DC |
IF |
30 |
A |
|
1 ms |
IFP |
120 | ||
| Drain power dissipation (t = 5 s) (Note 2a) |
PD |
2.5 |
W | |
| Drain power dissipation (t = 5 s) (Note 2b) |
PD |
0.7 |
W | |
| Single pulse avalanche energy (Note3) |
EAS |
1.2 |
mJ | |
| Avalanche current |
IAR |
-1.35 |
A | |
| Repetitive avalanche energy (Note4) |
EAR |
0.25 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
TPCF8103 Features
• Low drain-source ON resistance: RDS (ON) = 72 m (typ.)
• High forward transfer admittance: |Yfs| = 4.7S (typ.)
• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)
• Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200A)
• High forward transfer admittance: |Yfs| = 4.7S (typ.)
• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)
• Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200A)
TPCF8103 Connection Diagram
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