TPCP8201, TPCP8202(TE85FM, TPCP8202(TE85L.F) Selling Leads, Datasheet
MFG:TOS Package Cooled:PS8 D/C:07+
TPCP8201, TPCP8202(TE85FM, TPCP8202(TE85L.F) Datasheet download
Part Number: TPCP8201
MFG: TOS
Package Cooled: PS8
D/C: 07+
TPCP8201, TPCP8202(TE85FM, TPCP8202(TE85L.F)
- Table of contents:
Info of TPCP8201
Info of TPCP8202(TE85FM
Info of TPCP8202(TE85L.F)
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCP8201 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Drain-source voltage |
VDSS |
30 |
V | |
| Drain-gate voltage (RGS = 20 k) |
VGR |
30 |
V | |
| Gate-source voltage |
VGSS |
±20 |
V | |
| Drain current | DC (Note 1) |
ID |
4.2 |
A |
| Pulse (Note 1) |
IDP |
16.8 |
A | |
| Drain power dissipation (t = 5 s) (Note 2a) |
Single-device operation (Note 3a) |
PD(1) |
1.48 |
W |
| Single-device value at dual operation (Note 3b) |
PD(2) |
1.23 | ||
| Drain power dissipation (t = 5 s) (Note 2b) |
Single-device operation (Note 3a) |
PD(1) |
0.58 | |
| Single-device value at dual operation (Note 3b) |
PD(2) |
0.36 | ||
| Single pulse avalanche energy (Note 4) |
EAS |
2.86 |
mJ | |
| Avalanche current |
IAR |
2.1 |
A | |
| Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) |
EAR |
0.12 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
Tstg |
-55~150 |
||
Note: For Notes 1 to 6, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
TPCP8201 Features
• Lead(Pb)-Free
• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
• High forward transfer admittance:|Yfs| = 7.0 S (typ.)
• Low leakage current: IDSS = 10 A (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
• High forward transfer admittance:|Yfs| = 7.0 S (typ.)
• Low leakage current: IDSS = 10 A (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
TPCP8201 Connection Diagram
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