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TPCP8302, TPCP830I, TPCP8402

Table of contents:
Info of TPCP8302
Info of TPCP830I
Info of TPCP8402

TPCP8302, TPCP830I, TPCP8402 Selling Leads, Datasheet

MFG:TOS Package Cooled:SOT-8 D/C:09+

TPCP8302, TPCP830I, TPCP8402 Datasheet download

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Part Number: TPCP8302

MFG: TOS

Package Cooled: SOT-8

D/C: 09+

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TPCP8302 Maximum Ratings

Characteristic		Symbol	Value	Units
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS = 20 k)		V_DGR	−20	V
Gate-source voltage		V_GSS	±12	V
Continuous Drain Current	DC (Note 1)	I_D	-5	A
Continuous Drain Current	Pulse (Note 1)	I_DP	-20	A
Drain power dissipation t = 5 s) (Note 2a)	Single-device operation (Note 3a)	P_D(1)	1.48	W
Drain power dissipation t = 5 s) (Note 2a)	Single-device value at dual operation (Note 3b)	P_D(2)	1.23
Drain power dissipation t = 5 s) (Note 2b)	Single-device operation (Note 3a)	P_D(1)	0.58
Drain power dissipation t = 5 s) (Note 2b)	Single-device operation (Note 3a)	P_D(2)	0.36
Single-pulse avalanche energy (Note 4)		E_AS	6.5	mJ
Avalanche current		I_AR	-5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.12	mJ
Channel temperature		T_ch	150
Junction and Storage Temperature Range		T_J, T_STG	- 55 to +150

Note: For Notes 1 to 6, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

TPCP8302 Features

• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_DS(ON) = 25 m (typ.)
• High forward transfer admittance: |Y_fs| = 14 S (typ.)
• Low leakage current: I_DSS = −10 A (max) (V_DS = −20 V)
• Enhancement model: V_th = −0.4 to −1.0V (V_DS = −6 V, I_D = −1 mA)

TPCP8302 Connection Diagram

TPCP8402 Maximum Ratings

Characteristics		Symbol	Rating		Unit
Drain-source voltage		V_DSS	−32	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−32	30	V
Gate-source voltage		V_GSS	±20	±20	V
Drain current	DC (Note 1)	_ID	−5.5	4.2	A
Drain current	Pulse (Note 1)	I_DP	−22	16.8	A
Drain power dissipation (t = 5 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.48	1.48	W
Drain power dissipation (t = 5 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.06	1.23	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.58	0.58	W
Drain power dissipation (t = 5 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.36	0.36	W
Single pulse avalanche energy (Note 4)		E_AS	0.75	2.86	mJ
Avalanche current		I_AR	−1.7	2.1	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.12		mJ
Channel temperature		_Tch	150		°C
Storage temperature range		T_stg	−55~150		°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPCP8402 Features

• Low drain-source ON resistance
: P Channel R_{DS (ON)} = 60 m (typ.)
N Channel R_{DS (ON)} = 38 m (typ.)
• High forward transfer admittance
: P Channel |Yfs| = 6.0 S (typ.)
N Channel |Yfs| = 7.0 S (typ.)
• Low leakage current
: P Channel I_DSS = −10 A (V_DS = −30 V)
N Channel I_DSS = 10 A (V_DS = 30 V)
• Enhancement−mode
: P Channel V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1mA)
N Channel V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1mA)

TPCP8402 Connection Diagram

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