MFG:Triquint Semiconductor Inc Category:RF and RFID Package Cooled:N/A D/C:05+
TQM7M4006, TQM7M4014, TQM7M4022 Datasheet download
Category: RF and RFID
MFG: Triquint Semiconductor Inc
Package Cooled: N/A
D/C: 05+
Description: MODULE GSM QUAD-BAND 3V 17-LGA
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PDF/DataSheet Download
Datasheet: TQM7M4006
File Size: 74191 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TQM7M4014
File Size: 212080 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TQM6M4002
File Size: 181503 KB
Manufacturer: TriQuint Semiconductor
Download : Click here to Download
| Technical/Catalog Information | TQM7M4006 |
| Vendor | Triquint Semiconductor Inc |
| Category | RF and RFID |
| Package / Case | 27-LGA |
| Voltage - Supply | 3V ~ 4.5V |
| Current - Supply | 1.8A |
| Gain | - |
| Frequency | 824MHz ~ 915MHz |
| RF Type | GSM, DCS, PCS |
| Packaging | Tape & Reel (TR) |
| Noise Figure | - |
| P1db | - |
| Test Frequency | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TQM7M4006 TQM7M4006 |
The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier module designed for mobile handset applications. The module sets new standards in performance and size by employing the latest technologies in power amplifier design. High-reliability is assured by InGaP HBT technology in combination with new CuFlip™ assembly technology. This fully integrated module, in a minimal form factor, provides a simple 50 Ω interface on all input and output ports. It includes internal closed-loop power control with wide dynamic range, and onboard reference voltage. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands.
Incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. All die are CuFlip™ mounted to minimize thermal excursions. Each amplifier has three gain stages with interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated closed-loop power control within the module, eliminating the need for external detection to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs and a highly-stable on-board reference voltage. Excellent performance is achieved across the 824 849 MHz, 880 915 MHz, 1710 1785 MHz, and 1850 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate.
• Very compact size 5*5*1.1 mm3.
• Positive supply voltage 2.9 to 4.5 V.
• High efficiency typical GSM850 50%, GSM900 55%, DCS 50%, PCS 50%.
• CMOS internal closed-loop power control.
• 55 dB dynamic control range.
• GPRS class 12 compatible.
• High-reliability InGaP technology.
• Ruggedness 10:1.
• 50 Ω input and output impedances.
• Few external components
| Technical/Catalog Information | TQM7M4022 |
| Vendor | Triquint Semiconductor Inc |
| Category | RF and RFID |
| Package / Case | 17-LGA |
| Voltage - Supply | 3V ~ 4.5V |
| Current - Supply | 1.8A |
| Gain | - |
| Frequency | 824MHz ~ 849MHz |
| RF Type | GSM, DCS, PCS |
| Packaging | Tape & Reel (TR) |
| Noise Figure | - |
| P1db | 33dBm |
| Test Frequency | 1.75GHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TQM7M4022 TQM7M4022 |
Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible.
| Item | Parameter |
Specifications |
remarks | ||||
| # |
Symbol |
Min |
Typ |
Max |
Unit | ||
| 1 | DC Supply Voltage |
VBATT |
-0.5 |
6.0 |
V |
No operation | |
| 2 | DC Supply Current |
IBATT |
2.4 |
A |
|||
| 3 4 5 |
Power Control Voltage Transmit_Enable Band Select |
VRAMP TX_EN BS |
-0.5 -0.5 -0.5 |
3.0 3.0 3.0 |
V V V |
||
| 6 | Input RF Power |
PIN |
13 |
dBm |
|||
| 7 | DC Voltage on RFin ports |
4.0 |
V |
||||
| 7 | Operating Duty Cycle |
50 |
% |
Frame Length = 4.6ms | |||
| 8 9 |
Operating Temperature Storage Temperature |
TA TS |
-30 -55 |
85 155 |
|
||
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